NXP USA Inc. MW6S004NT1
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | PLD-1.5 |
| Frequency | 1.96GHz |
| Resistance | 549 kOhms |
| Surface Mount | YES |
| Tolerance | ±0.1% |
| Transistor Application | AMPLIFIER |
| Transistor Type | LDMOS |
| Power - Output | 4W |
| Max Operating Temperature The Maximum Operating Temperature is the maximum body | 150°C |
NXP USA Inc. MW6S004NT1 is a RF power LDMOS (Transverse-diffused metal oxide semiconductor) transistor, MW6S004NT1 is designed for Class A or AB base station applications with frequencies up to 2000 MHz, mainly used in high frequency, high power wireless communication applications. The transistor ic has an operating frequency range of up to 2000 MHz, and under certain conditions (e.g. 1960 MHz, 28 V), the RF power transistor is capable of delivering up to 4 W continuous wave output power (PEP) with a power gain of 18 dB. In addition, the transistor has a high drain efficiency (such as 33%) and broadband stability, which helps to reduce energy loss and improve the overall performance of the system.
MW6S004NT1 Features:
· Operating frequency up to 2000 MHz
Provides up to 4 W of PEP with 18 dB power gain
· Anti-Sulfur, Automotive AEC-Q200
Operating Temperature from -55°C to 175°C
· High drain efficiency (e.g. 33%) and broadband stability
Main applications:
1. Base station application: Especially class A or Class AB base station application, support high-frequency signal transmission and amplification. Ideal for modern wireless communication systems such as LTE, 5G, etc.
2. Modulation and multi-carrier applications: The transistor is suitable for analog and digital modulation technologies, and is also suitable for multi-carrier amplifier applications, which can be flexibly applied in a variety of communication protocols and systems.
3. Radio frequency amplifier: can be used as a radio frequency amplifier to amplify radio frequency signals in wireless communication systems to enhance the transmission distance and quality of signals.
4. Other high-frequency applications: Due to its excellent performance and wide applicability, MW6S004NT1 may also be used in other fields requiring high-frequency, high-power RF signal processing, such as radar, satellite communications, etc.
