BSC123N08NS3G
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Mounting Type | Surface Mount |
| Drain to Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (ID) | 55 A (at 25°C, Tc) |
| Pulsed Drain Current-Max (IDM) | 220 A |
| Drain-source On Resistance-Max | 12.3 mΩ (max) at Vgs = 10V, Id = 33A |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC (max) at Vgs = 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF (typ) at Vds = 15V |
| Transfer Characteristics | 15 pF (typ) |
| Gate to Source Voltage (Vgs) | ±20 V |
| Power Dissipation | 66 W (at Tc) |
| Avalanche Energy Rating (Eas) | 70 mJ |
| Operating Temperature - Junction | -55°C to +150°C |
BSC123N08NS3G N-Channel Power MOSFET
The BSC123N08NS3G is an N-channel power MOSFET from Infineon's OptiMOS™ 5 family, engineered for high-efficiency power conversion in compact, thermally constrained designs. Fabricated on a 80V silicon process, this device delivers a robust 55A continuous drain current (TC=25°C) with an exceptionally low 12.3 mΩ maximum on-resistance (at 10V Vgs), striking an optimal balance between conduction loss and switching speed. Housed in a 5mm x 6mm TDSON-8 (SuperSO8) package with an exposed thermal pad, it offers superior heat dissipation for a rated power dissipation of 66W.
BSC123N08NS3G Applications
● Synchronous Rectification: Primary or secondary-side switch in high-frequency SMPS, server power supplies, and telecom DC-DC converters.
● Motor Drive & Control: High-current H-bridge and half-bridge circuits for industrial motor drives, robotics, and e-mobility controllers.
● Automotive Systems: Load switches, battery management systems (BMS), and DC-DC conversion in 12V/24V vehicle power networks.
● Industrial Power Tools: High-performance switching element in cordless tool inverters and high-amperage discharge circuits.
● POL Converters: High-current output stage for non-isolated buck converters powering FPGAs and ASICs.
Alternative N-ch MOSFET Models
1. VBGQA1805 (VBsemi): A pin-compatible alternative offering a lower 4.5 mΩ RDS(on) and higher current rating, ideal for performance upgrades in similar DFN8 footprints.
2. IRF3205 (Infineon): A classic D2PAK MOSFET with comparable voltage/current ratings, serving as a through-hole or larger-footprint alternative for legacy designs.
3. FDP8878 (ON Semiconductor): An N-channel MOSFET in a similar power class, often used as a cross-reference in SMPS and motor drive designs.
4. BSC123N08NS3GATMA1 (Infineon): The standard tape-and-reel variant of the same part, ensuring identical electrical characteristics for volume production sourcing.
