AFT27S006NT1

RF Mosfet 2.17GHz 22dB 28V 70mA


  • Manufacturer: NXP USA Inc.
  • CONEVO NO: AFT27S006NT1
  • Package: PLD-1.5W
  • Stock: In stock
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Details

Tags

Parameters
Type LDMOS Transistor
Mfr NXP USA Inc.
Technology N-Channel Enhancement-Mode LDMOS
Frequency Range 100 MHz to 3700 MHz
Output Power 28.8 dBm (0.758 W) Typical (Average)
Drain to Source Voltage (Vdss) 65 V (Rated)
Supply Voltage 28 V (Test Condition)
Quiescent Current 65 mA to 70 mA
Power Gain-Min (Gp) Up to 24.4 dB (Typical at 748 MHz)
Mounting Type Surface Mount
Thermal Resistance 3.4 °C/W (Typical)
Operating Temperature - Junction -40°C to +150°C

AFT27S006NT1 LDMOS RF power transistor

The AFT27S006NT1 is an N-channel LDMOS RF power transistor from NXP's Airfast® portfolio, engineered for high-linearity amplification in modern cellular infrastructure. Operating over a wide 100 MHz to 3.7 GHz frequency range and optimized for 28 V drain supply, it delivers a typical average output power of 28.8 dBm (≈ 7.6 W) under W-CDMA modulation with high gain (≈ 22 dB) and efficiency. Housed in a compact PLD-1.5W surface-mount package (6.6 x 5.84 x 1.74 mm) featuring a large backside ground pad for excellent thermal management, this device is specifically designed for Class AB operation and compatibility with Digital Pre-Distortion (DPD) systems.

AFT27S006NT1 Applications

● Cellular Base Station Driver Stages

● Broadband Wireless Systems

● Land Mobile Radio (LMR)

● ISM Band Amplifiers

● General Purpose RF Power

Alternative Power Transistor Models

1. AFT27S010N (NXP): A higher-power sibling in the same family offering ≈ 10 W output capability, suitable for designs requiring more headroom or driving larger final stages.

2. MRFE6VP5600HR3 (NXP): A 50 V LDMOS transistor in a similar frequency range but in a larger TO-270 package, offering higher power for main PA stages.

3. BLF6G10LS-250 (Ampleon): A 10 W LDMOS transistor covering 700–1000 MHz, serving as an alternative for specific narrowband or lower-frequency applications.

4. PTVA127002E-V1-R0 (Infineon): A 7 W E-pHEMT device optimized for 2300–2700 MHz, providing an alternative architecture for certain broadband driver applications.

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