IPD90N06S4L06ATMA2
| Parameters | |
|---|---|
| Type | N-Channel Power MOSFET |
| Mfr | Infineon Technologies |
| Series | OptiMOS™-T2, Automotive |
| Mounting Type | Surface Mount |
| Continuous Drain Current (ID) | 90 A |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC (max) at Vgs = 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF (max) at Vds = 25V |
| Power Dissipation | 79 W (at Tc) |
| Operating Temperature - Junction | -55°C to +175°C |
IPD90N06S4L06ATMA2 Automotive N-Channel MOSFET
The IPD90N06S4L06ATMA2 is a high-performance automotive-grade N-channel enhancement-mode MOSFET from Infineon, part of the OptiMOS®-T2 family, engineered for efficient power switching in automotive and industrial applications. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A, with an ultra-low maximum on-resistance (RDS(on)) of 6.3mΩ at VGS = 10V, minimizing power loss and heat generation for enhanced system efficiency. Qualified to AEC-Q101 Grade 1, this device supports an extended operating temperature range of -40°C to 175°C and offers MSL1 reliability withstanding peak reflow temperatures up to 260°C, ensuring robust performance in harsh automotive environments.
Operating with a gate-source voltage (VGS) range of ±20V, the IPD90N06S4L06ATMA2 delivers fast switching speeds with a typical turn-on delay time (td(on)) of 15ns and turn-off delay time (td(off)) of 45ns, supporting high-frequency operation in power conversion systems. It incorporates advanced trench technology for low conduction and switching losses, with a maximum drain-source on-resistance (RDS(on)) of 6.3mΩ and a typical input capacitance (Ciss) of 2,800pF, optimizing efficiency in battery management, motor control, and DC-DC converter applications.
Alternative MOSFET Models
● Infineon IPD90N06S4L03ATMA2: 60V N-channel MOSFET with lower RDS(on) (3.5mΩ) in TO-252-3 package, ideal for high-efficiency automotive applications.
● onsemi NVMFS5C460NL: 60V N-channel MOSFET in DPAK package, featuring low RDS(on) and AEC-Q100 qualification for automotive power modules.
● Vishay SiR9040DP: 60V N-channel MOSFET with 90A current rating and ultra-low on-resistance, suitable for high-current automotive and industrial switching applications.
● Texas Instruments CSD95373Q5A: 60V N-channel MOSFET in DPAK package, integrating enhanced thermal performance for high-power density automotive designs.
