On June 12, 2026, China's Supreme People's Court issued a provisional injunction review ruling, upholding the sales ban imposed by the Suzhou Intermediate People's Court against Infineon and rejecting all of Infineon's review requests. This means Infineon's gallium nitride (GaN) products are now immediately prohibited from being sold, offered for sale, or imported within China. Innoscience secured victory in this cross-border patent dispute spanning a year and a half.

Suzhou Court Rules Infringement Established

On May 27, 2026, the Suzhou Intermediate People's Court delivered its first-instance verdict in Innoscience's patent infringement lawsuit against Infineon. The court found Infineon guilty of infringing two independently developed GaN core invention patents held by Innoscience, covering key power semiconductor technologies. Infineon was ordered to immediately cease all infringing acts including sales, offers for sale, and imports, and to pay Innoscience damages totaling RMB 10 million, with the judgment taking immediate effect. Infineon filed for review, which the Supreme People's Court denied on June 12, rendering the injunction effective at once.

Global Patent Battle

Infineon and Innoscience have engaged in patent disputes across multiple jurisdictions in recent years. In June 2024, Infineon sued Innoscience at the Munich District Court in Germany and secured a preliminary injunction restricting Innoscience's sales of the accused products there. Between late 2025 and May 2026, the U.S. International Trade Commission ruled in a Section 337 investigation that certain Innoscience products infringed, while clarifying that its mainstream commercially available products did not. The China market ban marks a pivotal victory for Innoscience in the global patent contest, reversing the offensive-defensive dynamic.

Domestic Substitution Landscape

Headquartered in Zhuhai, Innoscience produces high- and low-voltage GaN power ICs and power semiconductors. It listed on the Main Board of the Hong Kong Stock Exchange at the end of 2024. As a core third-generation semiconductor material, GaN is widely used in fast charging, server power supplies, and new energy vehicles—high-growth sectors. Industry observers widely believe this ruling will significantly reshape the domestic GaN power device competitive landscape, boosting Innoscience's market share and accelerating the domestic substitution process.

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