On July 9, U.S. memory chip giant Micron Technology officially announced that it has raised its total U.S.-based manufacturing and technology investment from $200 billion to over $250 billion, an increase of $50 billion, with the investment cycle extending through 2035.
This additional investment aims to fully meet the unprecedented demand for memory chips driven by the rapid expansion of artificial intelligence infrastructure, while helping Micron achieve its long-term strategic goal of producing approximately 40% of its DRAM output domestically in the United States, further strengthening the autonomous and controllable capabilities of its domestic supply chain.
Micron's massive investment covers multiple core projects across New York, Idaho, and Virginia. Among them, the new factory in Clay, New York, has completed its first concrete pour one quarter ahead of schedule, with construction progress exceeding expectations. Micron's first advanced wafer fab in Idaho is expected to produce its first wafers by mid-2027. Near Syracuse, New York, a $100 billion wafer fab complex is planned, representing the largest private investment in New York State history. Existing facilities in Virginia will also undergo simultaneous expansion and modernization upgrades.
In addition to factory construction, Micron plans to invest an additional $3 billion to strengthen the U.S. semiconductor supply chain. This includes $500 million in strategic financing for Taiwan-based silicon wafer supplier GlobalWafers to support the upgrade and capacity expansion of its 300mm prime silicon wafer plant in Sherman, Texas. The two companies have reached a 10-year long-term supply agreement, under which Micron will secure substantial silicon wafer capacity to support its long-term manufacturing plans and strengthen the construction of America's critical semiconductor manufacturing ecosystem. Both parties also plan to jointly explore next-generation wafer technologies.
In summary, in the third quarter of fiscal year 2026, Micron achieved revenue of $41.46 billion, surging 346% year-over-year, with gross margin climbing to a record high of 84.9%. Driven by AI computing power demand, High Bandwidth Memory (HBM) requirements have skyrocketed, and the memory industry is facing structural supply-demand imbalance. Micron is accelerating to seize market opportunities and consolidate its industry-leading position.
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● MT40A1G8SA-062E:E TR —Micron 8Gb DDR4 SDRAM, x8, 3200 MT/s, ideal for high-performance computing.
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● MT40A512M16TB-062E:R — Micron 8Gb DDR4 SDRAM, x16, 3200 MT/s, for embedded and data center use.
● MT41K64M16TW-125:J — Micron 1Gb DDR3 SDRAM, x16, 800 MHz, cost-effective for industrial platforms.
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