| Parameters | |
|---|---|
| Operating Temperature Range | -55°C to +175°C |
| Series | OptiMOS™ 3 |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain Current-Max (Abs) (ID) | 40 A (at 25°C, Tc) |
IPD090N03LGATMA1 N-channel power MOSFET
The IPD090N03LGATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, featuring advanced OptiMOS™ 3 technology optimized for fast switching in a robust PG-TO252-3 (DPAK) surface-mount package. This power transistor delivers maximum drain-source voltage of 30V with continuous drain current capability of 40A at 25°C junction temperature, achieving exceptionally low on-resistance of just 7.5mΩ typical (9mΩ maximum) at VGS=10V and ID=30A. Operating across an extreme temperature range from -55°C to +175°C and qualified according to JEDEC standards, this device provides 42W power dissipation capability while maintaining logic-level gate drive compatibility with threshold voltage of 1V to 2.2V. The MOSFET is fully RoHS compliant with Pb-free plating and features avalanche rating for robust operation in demanding switch-mode power supply applications.
Applications
• DC/DC Converters: Synchronous buck and boost converters, POL (Point-of-Load) regulators, and voltage regulation modules requiring high efficiency and fast switching .
• Switch-Mode Power Supplies: AC-DC adapters, LED drivers, and industrial power supplies benefiting from low conduction and switching losses .
• Motor Control: Brushless DC motor drives, stepper motor controllers, and servo systems requiring high-current switching with low RDS(on) .
• Battery Management Systems: Battery protection circuits, charging systems, and load switching in lithium-ion and lead-acid battery applications .
• Automotive Electronics: Powertrain control modules, body electronics, and lighting systems requiring robust operation and wide temperature range .
• Industrial Equipment: Factory automation, robotics, and process control systems demanding reliable high-current switching capability .
Alternative power transistor Parts
1. IPD090N03L G: Base part number variant with identical electrical specifications in standard packaging, suitable for general procurement without the specific tape-and-reel suffix.
2. IPD30N03S4L09ATMA1: Lower-current alternative offering 30A capability with similar 30V rating and TO-252 package for applications with reduced power requirements.
3. BSZ050N03LSGATMA1: Compact variant in SuperSO8 package providing similar electrical performance with reduced footprint for space-constrained designs.
4. IPD60R650CEAUMA1: Higher-voltage alternative with 600V rating and 9A capability for applications requiring elevated voltage handling rather than high current.
5. IRF3710PBF: International Rectifier's established N-channel MOSFET offering comparable current capability with different package options for supply chain flexibility.