IR2111STRPBF
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Number of Drivers | 2 |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Non-Inverting |
| Supplier Device Package | 8-SOIC |
| Channel Type | Synchronous |
| Voltage - Supply | 10V ~ 20V |
| Rise / Fall Time (Typ) | 80ns, 40ns |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
| Logic Voltage - VIL, VIH | 8.3V, 12.6V |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Conevo-Key Programmable | Not Verified |
| Base Product Number | IR2111 |
| REACH Status | REACH Unaffected |
| Standard Package | 2,500 |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
IR2111STRPBF IR2111 Half-Bridge Gate Driver 600 V
The IR2111STRPBF is a high-voltage, high-speed half-bridge gate driver from Infineon's EiceDRIVER™ family (originally International Rectifier), housed in an 8-lead SOIC-8 (SOIC 8N). Designed around proprietary HVIC and latch-immune CMOS technology, it integrates independent high-side and low-side referenced output channels tailored for bootstrap-operated half-bridge topologies driving N-channel MOSFETs or IGBTs up to 600 V. With a 10 V to 20 V gate-drive supply (VCC/VBS), logic inputs compatible with standard CMOS/TTL (VIL/VIH = 8.3 V / 12.6 V), and internal deadtime to prevent half-bridge shoot-through, the device targets motor drives, SMPS, DC-link inverters, and general-purpose power-conversion stages where a compact 8-pin footprint and rugged monolithic construction are priorities over higher-current buffer stages.
Key differentiators within the IR211x lineage lie in the combination of 600 V functional level-shift isolation (JI, junction isolated) and matched propagation delay between high-side and low-side channels, which simplifies timing closure in synchronous half-bridge loops without external deadtime generators. CMOS Schmitt-triggered inputs with internal pull-down resist spurious switching during power-up/down, while the bootstrap-configured floating channel avoids the need for an isolated high-side supply—only a bootstrap diode and capacitor sit between VCC and VB.
Alternative Gate Driver Models
● IR2110SPBF: 16-lead SOIC upgrade in the same IR211x family, boosting peak output to 2.5 A source/sink with independent high/low logic inputs (vs. the IR2111's single IN) and 120 ns / 94 ns typ. ton/toff, suited when the IR2111's 0.5 A sink is marginal.
● IR2113STRPBF: Higher-current 16-pin sibling delivering 2 A / 2 A peak source/sink, 600 V offset, and 20 ns max delay matching, positioned as the natural migration path when IR2111 drive strength or independent-HL-input control is needed.
● IR2117STRPBF: Infineon single-channel high-side-only driver in SOIC-8, 600 V, 250 mA / 500 mA, sharing the IR2111's process and bootstrap topology but dropping the low-side channel for simpler high-side-switch applications.
