Micron Technology Inc. NAND02GR3B2DN6E
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Base Product Number | NAND02G |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Other Names | -NAND02GR3B2DN6E |
| Standard Package | 96 |
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 48-TSOP
