NX2301P,215
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| Part Status | Not For New Designs |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mfr | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-236AB |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 6 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| FET Feature | - |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Vgs (Max) | ±8V |
| Grade | Automotive |
| Base Product Number | NX2301 |
| Power Dissipation (Max) | 400mW (Ta), 2.8W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Qualification | AEC-Q101 |
NX2301P,215 Nexperia 20V 2A P-Channel TrenchMOS™ MOSFET
The NX2301P,215 is a P-channel enhancement-mode field-effect transistor (MOSFET) manufactured by Nexperia (the former NXP Standard Products division), built on advanced TrenchMOS™ technology and housed in a standard SOT-23-3 (TO-236AB / SC-59) surface-mount plastic package. It is specified for VDS= –20V and a continuous drain current of ID= –2A @ 25°C (Ta), making it a classic choice for low-to-medium voltage high-side switching and load-control duties where board space is tight. The device features 1.8V-rated RDS(on) capability, meaning it can be turned on effectively even with modest logic-level gate drive—a key advantage in battery-powered and microcontroller-driven designs that lack a dedicated high-voltage gate rail. It is AEC-Q101 qualified for automotive-grade stress testing and operates across –55°C to +150°C (Tj).
This transistor serves most naturally as a high-side load switch (power gating USB ports, peripheral modules, or backup battery feeds), a reverse-polarity protection pass element, a relay / solenoid low-side-driver complement, and a power-path selector in dual-rail battery systems. Its strong suit is enabling simple, gate-logic-driven power domains without needing an external charge pump or N-channel level-shift driver, all in a 2.9×1.3×1.0mm footprint.
Alternative MOSFETs
● SI2301CDS-T1-E3: P-Ch –20V / –3.1A, RDS(on)~110mΩ, VGS(th)as low as –0.4…–1.0V, same SOT-23 footprint, good for higher pulsed loads.
● AO3413: P-Ch –20V / –3A, RDS(on)80mΩ @ –4.5V, 1.4W dissipation rating, SOT-23-3, broadly stocked across Asia and NA channels.
● FDN338P: P-Ch –20V / –1.6A, RDS(on)115–130mΩ @ –4.5V, SOT-23-3 (SuperSOT™-3 outline), still active and useful when existing footprints demand proven silicon.
● DMG2301L-13: P-Ch –20V / –3A, rated up to 1.5W (Ta), SOT-23-3, with competitive RDS(on)and solid availability for new designs.
