MT41J256M16HA-093G:E TR
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 96-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Technology | SDRAM - DDR3 |
| Supplier Device Package | 96-FBGA (9x14) |
| Access Time | 20 ns |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.425V ~ 1.575V |
| Clock Frequency | 1.066 GHz |
| Memory Organization | 256M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Base Product Number | MT41J256M16 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,000 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
MT41J256M16HA-093G:E TR DDR3 SDRAM Memory IC Parallel 1.066 GHz 20 ns
The MT41J256M16HA-093G:E TR is a high-performance 4Gb DDR3 Synchronous Dynamic Random Access Memory (SDRAM) engineered by Micron Technology. Organized as a 256 Meg x 16 configuration, this chip is built on a sophisticated 8-bank architecture designed to provide high-speed data transfer and low-latency performance. Operating at a clock frequency of 1066 MHz (DDR3-2133), it utilizes a double data rate architecture to achieve incredibly high bandwidth. With a 1.5V standard power supply, this memory solution balances raw processing power with established voltage standards to ensure compatibility across a wide range of legacy and contemporary processing platforms.
This DDR3 component boasts a suite of advanced technical features designed for signal integrity and operational efficiency. It supports differential bidirectional data strobes (DQS and DQS#) and 8n-bit prefetch architecture, which allows for rapid data bursts and improved throughput. The integration of On-Die Termination (ODT) improves signal quality by reducing reflections on the memory bus, while the self-refresh and power-saving modes ensure the device remains thermally efficient. The chip is housed in a compact 96-ball FBGA package, which provides excellent electrical performance and a small footprint for dense PCB layouts.
Alternative DDR3 SDRAM Memory Solutions
● Samsung K4B4G1646E-BCNB: A highly reliable 4Gb DDR3 component known for its excellent thermal management and widespread compatibility in server-grade modules.
● SK Hynix H5TQ4G63AFR-PBC: This alternative offers comparable 256Mx16 density and is favored for its robust performance in high-speed consumer electronics and graphics processing tasks.
● Winbond W634GU6QB-11: A competitive low-voltage capable variant that provides similar density with an emphasis on power efficiency for portable or battery-operated industrial devices.
● ISSI IS43TR16256B-093NBL: Specifically designed for long-term support, this model is an excellent drop-in replacement for industrial and automotive applications requiring extended temperature ranges.
