MT47H128M8SH-25E IT:M
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 60-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Technology | SDRAM - DDR2 |
| Supplier Device Package | 60-FBGA (8x10) |
| Access Time | 400 ps |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.7V ~ 1.9V |
| Clock Frequency | 400 MHz |
| Memory Organization | 128M x 8 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Package | Bulk |
| Product Status | Active |
| Base Product Number | MT47H128M8 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,518 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0032 |
MT47H128M8SH-25E IT:M 1Gb DDR2 SDRAM Memory IC Parallel 400 MHz 78-FBGA
The MT47H128M8SH-25E IT:M, a high-performance 1Gb DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) component from Micron Technology, is housed in a 78-ball FBGA package, engineered to deliver high-speed data transfer with low power consumption for networking equipment, servers, embedded systems and high-end computing applications. Its key electrical specifications include four internal banks for concurrent access, programmable CAS latencies of 3, 4 and 5 cycles, burst lengths of 4 or 8 with sequential or interleaved burst type, and an auto refresh and self refresh mode that supports power-saving operation. The device features on-die termination (ODT) to improve signal integrity, posted CAS additive latency for improved command and data bus efficiency, and a differential clock (CK and CK#) with data strobe (DQS and DQS#) for precise data capture. Operating over the industrial temperature range of -40°C to 95°C and available in commercial (0°C to 95°C) and extended (-40°C to 95°C) grades, it is widely deployed in routers, switches, industrial PCs, medical imaging systems and telecommunications infrastructure that demand reliable, high-bandwidth memory with robust thermal performance.
Alternative DDR2 SDRAM Models
1. K4T1G084QF by Samsung: A 1Gb DDR2 SDRAM organized as 128Mx8, operating at 800 Mbps with 1.8V supply and 60-ball FBGA package, designed for networking and embedded systems.
2. H5PS1G83EFR by SK Hynix: A 1Gb DDR2 SDRAM with 128Mx8 configuration, 800 Mbps data rate and 1.8V operation in 84-ball FBGA, optimized for server and high-performance computing.
3. IS43TR16256A by ISSI: A 1Gb DDR2 SDRAM with 128Mx8 organization, 800 Mbps speed and 1.8V power in 84-ball FBGA, ideal for industrial and automotive applications.
