MT48LC8M16A2P-6A IT:L TR
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | SDRAM |
| Supplier Device Package | 54-TSOP II |
| Access Time | 5.4 ns |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Voltage - Supply | 3V ~ 3.6V |
| Clock Frequency | 167 MHz |
| Memory Organization | 8M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Base Product Number | MT48LC8M16A2 |
| REACH Status | REACH Unaffected |
| Standard Package | 2,000 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0002 |
MT48LC8M16A2P-6A IT:L TR Micron 128Mb Parallel SDRAM Memory IC
MT48LC8M16A2P-6A IT:L is a 128-megabit synchronous dynamic RAM manufactured by Micron, organized as 8M ×16-bit storage architecture and packaged in standard 54-pin TSOPII surface-mount form factor with tape-and-reel delivery, compliant with RoHS standards and MSL3 rating for automated SMT assembly. This industrial-grade memory operates across a wide temperature range of -40°C to +85°C, powered by a single 3.3V core supply voltage, with a 6ns clock access latency supporting a maximum 166MHz operating clock frequency. Built on mature CMOS SDRAM process with four internal bank architectures, it features standard JEDEC-compliant command set for row activation, column read/write, auto-refresh and precharge operations, widely stocked as legacy memory for embedded systems after formal end-of-life original wafer production.
This 16-bit wide SDRAM integrates four independent internal memory banks to enable interleaved burst access and boost continuous data throughput, supporting programmable burst lengths of 1,2,4,8 or full-page mode with sequential and interleaved burst addressing sequences. It utilizes auto-refresh and self-refresh power-saving modes to cut standby current for battery-powered hardware, includes fully synchronous pipelined command and data pipelines to eliminate asynchronous timing glitches, and offers separate byte mask pins to independently mask upper and lower 8-bit data bytes during write cycles. Input and output buffers feature robust ESD protection, and tight timing parameters maintain stable read/write performance under full industrial temperature fluctuation, while parallel 16-bit data bus delivers higher bandwidth than 8-bit density-equivalent SDRAM counterparts.
Alternative SDRAM ICs
● MT48LC8M16A2P-6A:C (Micron): Pin-compatible commercial temperature variant (0°C~70°C) with identical speed grade and density for cost-optimized indoor device substitution.
● IS42S81600-6BL (ISSI): 128Mb 8M×16 TSOPII-54 SDRAM with matching 166MHz speed and industrial temperature range as direct cross-brand drop-in replacement.
● HY57V16160FTP-6 (SK Hynix): JEDEC-standard 128Mb ×16 parallel SDRAM sharing identical package footprint and timing specs for mass-production second-source procurement.
