MT53E128M32D2DS-053 WT:A
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 200-WFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Technology | SDRAM - Mobile LPDDR4 |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.1V |
| Clock Frequency | 1.866 GHz |
| Memory Organization | 128M x 32 |
| Memory Format | DRAM |
| Memory Interface | - |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Active |
| Base Product Number | MT53E128 |
| REACH Status | REACH Unaffected |
| Other Names | MT53E128M32D2DS-053WT:A |
| Standard Package | 1,360 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
MT53E128M32D2DS-053 WT:A 4Gbit LPDDR4 SDRAM IC 1.866 GHz 200-WFBGA
The MT53E128M32D2DS-053 WT:A, engineered by Micron Technology, is a high-performance 4Gbit LPDDR4 SDRAM designed for power-sensitive and bandwidth-constrained mobile and embedded applications . This volatile memory device is organized as 128M x 32, providing a wide 32-bit data bus interface that enables efficient parallel data transfer for system-on-chip (SoC) and FPGA-based designs . Packaged in a compact 200-ball WFBGA (Very Thin Fine-Pitch Ball Grid Array) measuring 10mm x 14.5mm, this component is optimized for space-constrained PCB layouts while delivering exceptional signal integrity through its optimized ballout configuration.
Operating from a dual 1.1V core (VDD2) and 1.1V I/O (VDDQ) supply, the MT53E128M32D2DS-053 WT:A leverages LPDDR4's low-voltage architecture to achieve typical active current consumption of approximately 36mA and a low standby current of just 1.4mA, significantly extending battery life in portable systems . The device supports a full LPDDR4 command set including bank grouping, partial array self-refresh (PASR), and temperature-compensated self-refresh (TCSR), enabling fine-grained power management across various operational states.
Alternative DDR4 memory Models
● MT53E128M32D2DS-053 AIT:A – Micron's industrial temperature (-40°C to +95°C) variant of the same 4Gb LPDDR4 device, providing enhanced thermal tolerance for harsh environment applications while maintaining identical density and speed.
● MT53D1024M32D4DT – A dual-channel, dual-die, dual-rank 4GB (32Gb) LPDDR4 device from Micron providing four times the density for high-capacity applications requiring expanded memory footprint.
● MT53E1G32D2FW-046 IT:B – 4GB (32Gb) LPDDR4 device featuring dual-channel, dual-die, single-rank architecture operating at 2133MHz, suitable for applications requiring 8× higher capacity than the 4Gb part.
● W66CP2NQ – Winbond's 4Gb LPDDR4 SDRAM offering comparable 32-bit interface and 1866MHz speed, providing a second-source option for designs requiring alternative vendor qualification.
