Nexperia USA Inc. PHB45NQ15T,118
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mfr | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| FET Feature | - |
| Current - Continuous Drain (Id) @ 25°C | 45.1A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Vgs (Max) | ±20V |
| Grade | - |
| Base Product Number | PHB45NQ15 |
| Power Dissipation (Max) | 230W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Qualification | - |
PHB45NQ15T,118 N-channel standard-level FET Chip
The PHB45NQ15T,118 is a high-performance N-channel TrenchMOS™ standard-level FET designed for power switching and rectification applications. Manufactured by Nexperia, this MOSFET features a 150 V minimum drain-source breakdown voltage (VDS) and supports a continuous drain current (ID) of 45.1 A, with a peak pulse current of 90.2 A. Its ultra-low on-state resistance (RDS(on)) of 42 mΩ at 10 V gate drive ensures minimal conduction losses, while its fast switching speed (low gate charge, QGD = 10.3 nC) enhances efficiency in high-frequency circuits. The device is housed in a compact D2PAK (SOT404) package, offering excellent thermal performance with a junction-to-ambient thermal resistance of 23°C/W. Additional features include built-in diode protection, 180 mJ avalanche energy rating, and RoHS-compliant, lead-free construction, making it ideal for automotive, industrial, and consumer electronics applications.
Alternative power MOSFET Models
● Infineon IPD60R1K0CE: A 600 V, 1 A MOSFET in a DPAK package, optimized for high-voltage industrial applications with low gate charge.
● ON Semiconductor NTD587N75G: A 75 V, 80 A device with 2.8 mΩ RDS(on), ideal for battery management systems and synchronous rectification.
● Vishay SiSS18DN03L: A 30 V, 18 A MOSFET in a DFN package, featuring 1.8 mΩ RDS(on) for space-constrained, low-voltage designs.
● STMicroelectronics STD3NK80ZFP: An 80 V, 3.3 A MOSFET with 80 mΩ RDS(on), suitable for automotive lighting and power supplies.
