Winbond Electronics W632GG8NB11J
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| Parameters | |
|---|---|
| Mfr | Winbond Electronics |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-VFBGA |
| Supplier Device Package | 78-VFBGA (8x10.5) |
| Base Product Number | W632GG8 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Standard Package | 242 |
SDRAM - DDR3 Memory IC 2Gbit Parallel 933 MHz 20 ns 78-VFBGA (8x10.5)
