W971GG6NB-25
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 84-TFBGA |
| Mfr | Winbond Electronics |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Technology | SDRAM - DDR2 |
| Supplier Device Package | 84-TFBGA (8x12.5) |
| Access Time | 400 ps |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.7V ~ 1.9V |
| Clock Frequency | 400 MHz |
| Memory Organization | 64M x 16 |
| Memory Format | DRAM |
| Memory Interface | SSTL_18 |
| Write Cycle Time - Word, Page | 15ns |
| Package | Tray |
| Product Status | Active |
| Base Product Number | W971GG6 |
| REACH Status | REACH Unaffected |
| Other Names | 256-W971GG6NB-25 |
| Standard Package | 209 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0032 |
W971GG6NB-25 1Gb DDR2 SDRAM memory chip 400 MHz 400 ps 84-TFBGA
The W971GG6NB-25 from Winbond Electronics is a 1Gb (Gigabit) DDR2 SDRAM memory chip organized as 64M words x 16 bits x 8 banks. Operating at a standard 1.8V ± 0.1V supply voltage (VDD/VDDQ), it supports data rates up to 1066 Mbps (DDR2-1066) with backward compatibility to 800 Mbps (DDR2-800) and 667 Mbps (DDR2-667) speeds.
This DDR2 SDRAM incorporates a double data rate (DDR) architecture, transferring data on both the rising and falling edges of the clock to maximize bandwidth. It includes advanced signal integrity features such as Off-Chip Driver (OCD) impedance adjustment and On-Die Termination (ODT), which minimize signal reflections and improve data integrity in high-speed systems. The memory supports programmable CAS latencies (3, 4, 5, 6, 7) and burst lengths of 4 or 8. Its auto-precharge function simplifies memory controller design by automatically closing a row after a read or write burst, while auto-refresh and self-refresh modes ensure data retention with minimal power consumption. The integrated DLL (Delay-Locked Loop) aligns data and strobe signals with the system clock for precise timing.
The W971GG6NB-25 is engineered for high-performance computing, networking, and embedded systems that require reliable, moderate-density memory. Its primary applications include industrial control systems, telecommunications infrastructure, set-top boxes, and legacy computing platforms. It is also suitable for upgrading or repairing legacy consumer electronics, gaming consoles, and automotive infotainment systems that utilize DDR2 memory technology.
Alternative storage chips
● NDB16PFC-4DET (Insignis Technology Corporation): A functionally similar 1Gb DDR2 SDRAM organized as 64Mx16, offered as a direct alternative by major distributors.
● MT47H128M16RT-25E (Micron Technology): A 2Gb (128Mx16) DDR2 SDRAM chip from a leading manufacturer, providing higher density while maintaining a 16-bit bus and similar performance characteristics.
● K4T1G164QF-BCE7 (Samsung): A 1Gb (64Mx16) DDR2 SDRAM from Samsung, a common second-source option with equivalent specifications for design redundancy.
● HY5PS121621CFP-Y5 (SK Hynix): A 512Mb (32Mx16) DDR2 SDRAM from Hynix, suitable for applications where the full 1Gb density is not required but pin-out and timing compatibility are needed.
