In the field of high-performance computing and data centers, high-bandwidth memory (HBM) has always been a key point of technological competition. Samsung Electronics recently announced that its seventh-generation high-bandwidth memory (HBM4E), planned for mass production in 2027, has set a target bandwidth of over 3 terabytes per second (TB/s). The setting of this target marks another significant breakthrough for Samsung in the field of HBM technology.
Specifically, Samsung Electronics plans to increase the per-pin speed of HBM4E to over 13 gigabits per second (Gbps), achieving a maximum bandwidth of 3.25 TB/s. This figure is 2.5 times that of the current fifth generation (HBM3E). This substantial performance improvement will provide stronger support for applications such as artificial intelligence, high-performance computing, and data centers. NVIDIA previously requested an increase in the bandwidth of the sixth-generation HBM4 to be put into use next year, and Samsung's progress has undoubtedly further intensified the speed competition for the next generation of HBM.
In addition to its breakthroughs in the HBM field, Samsung Electronics has also demonstrated its strong technical capabilities in the mobile DRAM market. Samsung Electronics recently introduced the specific specifications of its first LPDDR6 product. LPDDR6 is the next-generation mobile DRAM, and its standard was released by JEDEC in July this year. Samsung's LPDDR6 product is planned to achieve a per-pin speed of 10.7 Gbps, with a total bandwidth of 114.1 gigabytes per second (GB/s), while improving energy efficiency by 20% compared to the existing LPDDR5X.
This performance improvement will bring faster data transfer speeds and lower power consumption to smartphones, tablets, and other mobile devices. Against the backdrop of the rapid development of 5G and artificial intelligence technologies, the high performance and energy efficiency of LPDDR6 will become the first choice for mobile device manufacturers, driving the performance and user experience of mobile devices to new heights.
In the foundry business, Samsung Electronics has also made important progress. Samsung hinted at the completion progress of its 2-nanometer process (SF2), planned for mass production by the end of this year. The mass production of this process will mark another significant breakthrough for Samsung in semiconductor manufacturing technology, enabling it to better meet the market's demand for high-performance, low-power chips.
In addition, Samsung Electronics also introduced its foundry cooperation with Rebellions, a South Korean AI chip startup. Rebellions is developing the REBEL-CPU, which combines the ARM Neoverse v3 CPU with its next-generation chip, REBEL-Quad. The REBEL-Quad neural network processor (NPU) will be manufactured using Samsung Electronics' 4-nanometer (SF4X) process, while the newly added CPU will be produced using the 2-nanometer process.
Samsung Electronics' technological breakthroughs in HBM, mobile DRAM, and foundry business demonstrate its strong capabilities and innovation in the field of semiconductor storage technology. With the rapid development of emerging technologies such as high-performance computing, artificial intelligence, and 5G communication, the demand for high-performance, low-power storage devices will continue to grow. Samsung Electronics is expected to continue increasing its investment in technology research and development and capacity expansion to further consolidate its leading position in the market.
At the same time, Samsung Electronics will continue to innovate and optimize its product portfolio to meet the diverse needs of different customer groups, promoting the coordinated development of the storage business with other business segments and maximizing the overall value of the company. Against the backdrop of increasingly fierce global semiconductor market competition, Samsung Electronics' technological breakthroughs have not only injected strong confidence and momentum into its future development but also set a new benchmark for the development of the entire industry.
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