Infineon Technologies IRF7303TRPBF
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Type | Dual N-Channel MOSFET |
| Technology | HEXFET® Power MOSFET |
| Continuous Drain Current (ID) | 5.5 A (each MOSFET) |
| Pulsed Drain Current-Max (IDM) | 22A |
| Power Dissipation | 2.5W (per MOSFET) |
| Turn-Off Delay Time | 34ns (typ) |
| Input Capacitance | 500 pF (typ) |
| Operating Temperature | -55 to +175 °C |
| Package | SOIC-8 |
| Applications | Power Management, DC-DC Converters, Motor Control |
Infineon IRF7303TRPBF Dual N-channel MOSFET IRF7303TRPBF 30V power MOSFET
The IRF7303TRPBF is a high-performance dual N-channel MOSFET designed for power management applications, offering efficient switching and low power dissipation. Manufactured by Infineon Technologies, this chip features a compact DPAK (TO-252) package, making it suitable for space-constrained designs while ensuring robust thermal performance. With a drain-source voltage (V<sub>DS</sub>) rating of 30V and a continuous drain current (I<sub>D</sub>) of 5.3A per channel, it is ideal for DC-DC converters, motor control, and load switching in industrial, automotive, and consumer electronics. The device incorporates advanced trench technology, providing low on-resistance (R<sub>DS(on)</sub>) of 50mΩ (typical) at 10V gate drive, enhancing energy efficiency and reducing heat generation.
The IRF7303TRPBF is optimized for fast switching applications, with a typical gate charge (Q<sub>g</sub>) of 12nC, ensuring minimal switching losses in high-frequency circuits. Its logic-level gate drive compatibility (4V threshold) allows for direct interfacing with microcontrollers and low-voltage control circuits without additional level-shifting components. The MOSFET also features an integrated fast-recovery body diode, improving reliability in inductive load applications by minimizing reverse recovery losses. The device operates over a wide temperature range (-55°C to +175°C), ensuring stable performance in harsh environments.
Safety and reliability are key aspects of the IRF7303TRPBF, with features such as avalanche energy resistance and a Pb-free, RoHS-compliant construction. The dual-channel configuration enables symmetrical switching in half-bridge or synchronous rectifier topologies, reducing component count in power supply designs. Its low leakage current and high electrostatic discharge (ESD) protection further enhance system durability. Engineers favor this MOSFET for its balance of cost-effectiveness, performance, and compact form factor, making it a versatile choice for modern power electronics.
Alternative Models
● IRF7301TRPBF – Similar dual N-channel MOSFET with 20V V<sub>DS</sub> and lower R<sub>DS(on)</sub> (35mΩ), suited for lower voltage applications.
● IRF7304TRPBF – Higher current rating (6.5A) and 40V V<sub>DS</sub>, ideal for more demanding power circuits.
● IRF7313TRPBF – Dual P-channel counterpart with -30V V<sub>DS</sub>, useful for complementary push-pull designs.
● IRF7324TRPBF – Combines N and P-channel MOSFETs in one package, offering design flexibility for H-bridge applications.
