LMBT3906LT1G

Introducing the LMBT3906LT1G, a high-performance transistor designed for a wide range of applications. This NPN epitaxial silicon transistor provides excellent amplification, making it ideal for use in small signal amplification, switching, and oscillating circuits. The LMBT3906LT1G offers a maximum collector current of 200 mA, ensuring reliable operation even in demanding applications. Its low collector-emitter saturation voltage and fast switching speeds further enhance performance, enabling efficient operation and reducing energy consumption. With a voltage rating of 40 V and a power dissipation of 350 mW, this transistor can handle a wide range of power requirements. Its SOT-23 surface mount package allows for easy integration into various circuit designs, making it well-suited for compact and lightweight electronic devices. The LMBT3906LT1G is manufactured using advanced processes to ensure high-quality and consistency. It meets the RoHS requirements, assuring its compliance with environmental regulations. Whether you need to amplify small signals or switch rapidly between states, the LMBT3906LT1G offers exceptional performance and reliability. Trust in its superior capabilities to enhance the performance of your electronic designs.