IRF640NLPBF
| Parameters | |
|---|---|
| Type | N-Channel Power MOSFET |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package / Case | TO-262-3 |
| Mounting Type | Through Hole |
| Continuous Drain Current (ID) | 18 A (at 25°C, Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC (max) at Vgs = 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF (max) at Vds = 25V |
| Gate to Source Voltage (Vgs) | ±20 V |
| Power Dissipation | 150 W (at Tc) |
| Operating Temperature - Junction | -55°C to +175°C |
IRF640NLPBF N-Channel Power MOSFET
The IRF640NLPBF is a high-performance, fifth-generation HEXFET® N-channel power MOSFET from Infineon Technologies (formerly International Rectifier), engineered for efficient power switching applications. Built on advanced PD-95046 process technology, this device delivers an optimal balance of low conduction losses, fast switching speed, and robust ruggedness. It is rated for a 200V drain-source voltage (VDS) and can handle a continuous drain current (ID) of 18A at 25°C, with a maximum power dissipation of 150W. Featuring a typical on-resistance (RDS(on)) of just 0.15Ω at 10V gate drive, it minimizes power loss during conduction. The MOSFET is fully avalanche rated and offers exceptional dynamic dv/dt capability, ensuring reliable operation in inductive load switching. Housed in a through-hole TO-262 package for efficient thermal dissipation, it operates over a wide junction temperature range of -55°C to +175°C.
IRF640NLPBF MOSFET Applications
● Switch-mode power supplies (SMPS): AC-DC and DC-DC converters, UPS systems
● Motor control: Brushed DC motor drives, fan speed controllers, industrial actuators
● Power inverters: Solar inverters, automotive DC-AC converters
● Industrial controls: Solenoid drivers, relay replacements, PWM amplifiers
● Lighting: Electronic ballasts, HID and LED lighting drivers
● Automotive electronics: Ignition systems, lighting controls, battery management
● Audio amplifiers: High-fidelity Class D amplifier output stages
Alternative N-channel MOSFET Models
1. Infineon IRF640NPBF: Direct pin-compatible alternative in TO-220AB package, identical 200V/18A specs, ideal for standard through-hole designs requiring broader heat dissipation.
2. ST STP19NB20: N-channel MOSFET, 200V, 19A, 0.135Ω RDS(on), TO-220, robust avalanche rating, cost-effective industrial-grade replacement for high-power switching.
3. Vishay SiHF19N20D: 200V, 19A, low 0.14Ω on-resistance, TO-220, fast switching, optimized for high-efficiency power supply and motor drive applications.
4. onsemi NTD4960N: 200V, 18.5A, 0.15Ω, TO-262 package match, advanced ESD protection, perfect form-fit-function replacement for space-constrained designs.
5. Infineon IRFSL4127: High-performance upgrade, same TO-262 package, 200V/72A, ultra-low RDS(on), designed for heavy-duty industrial and automotive high-current systems.
