QPA2966

QPA2966 GaN Power Amplifier

The QPA2966 from Qorvo is a high-performance, internally matched Gallium Nitride (GaN) on Silicon Carbide (GaN) Power Amplifier designed for demanding wideband applications. Operating across a broad frequency range of 2 GHz to 18 GHz, this device delivers a typical saturated output power (PSAT) of 43 dBm (20 Watts) with a power gain of 12 dB under large-signal conditions. Fabricated using Qorvo's proprietary QGaN15 process, it features a compact ceramic surface-mount package measuring 0.6 x 0.6 inches. The amplifier requires a drain voltage (Vd) of 22 V and a quiescent drain current (Idq) of 3360 mA, achieving a typical power-added efficiency (PAE) of 20%. It is characterized for operation with a baseplate temperature range from -40°C to +85°C, offering robust thermal performance and high reliability for military and aerospace environments. The device is 100% RF and DC tested, ensuring consistent performance across the entire S, C, X, and Ku bands.

Alternative GaN Amplifier Models

1. HMC1082LC4B (Analog Devices): A 2-20 GHz GaN MMIC power amplifier delivering 10 W output power in a compact 4x4 mm LCC package, ideal for space-constrained designs.

2. TGA2235-SM (Qorvo): A 2-18 GHz GaN power amplifier offering 5 W output power with higher gain (20 dB typical), suitable for applications requiring less power but more gain.

3. CMPA2735075F (Wolfspeed): A 2.7-3.5 GHz 75 W GaN HEMT device targeting high-power, narrowband applications like 5G macro base stations where wideband coverage is not required.

4. MAAP-011114 (MACOM): A 2-20 GHz GaN MMIC power amplifier providing 10 W output power with integrated temperature compensation, designed for commercial and defense applications.