PC28F128J3F75A

PC28F128J3F75A


  • Manufacturer: Alliance Memory, Inc.
  • CONEVO NO: PC28F128J3F75A
  • Package: 64-TBGA
  • Datasheet: PDF
  • Stock: In stock
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Details

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Parameters
Series -
Moisture Sensitivity Level (MSL) 3 (168 Hours)
RoHS Status ROHS3 Compliant
Package / Case 64-TBGA
Mfr Alliance Memory, Inc.
Mounting Type Surface Mount
Operating Temperature -40°C ~ 85°C (TA)
Technology FLASH - NOR
Supplier Device Package 64-EasyBGA (10x13)
Access Time 75 ns
Memory Size 128Mbit
Memory Type Non-Volatile
Voltage - Supply 2.7V ~ 3.6V
Memory Organization 16M x 8, 8M x 16
Memory Format FLASH
Memory Interface Parallel
Write Cycle Time - Word, Page 75ns
Package Tray
Product Status Active
Base Product Number PC28F128
REACH Status REACH Unaffected
Other Names 1450-PC28F128J3F75A
Standard Package 96
ECCN 3A991B1A
HTSUS 8542.32.0051

PC28F128J3F75A NOR Flash Memory IC 128Mbit Parallel 75 ns 

The PC28F128J3F75A is a high-density, 128-megabit (16-megabyte) NOR Flash memory device originally pioneered by Intel and subsequently carried forward through the Micron ecosystem, designed specifically for applications demanding reliable, non-volatile code execution and data storage. Engineered with a robust symmetrically blocked architecture, this device guarantees exceptional endurance and fast read access times, making it the quintessential solution for Execute-In-Place (XIP) operations where microprocessors fetch instructions directly from the memory without prior RAM shadowing. Packaged in a standard 56-TSOP outline, it provides a seamless upgrade path for legacy industrial and embedded designs requiring stable, long-term supply continuity for their critical firmware storage needs.

Operating from a nominal 3.0V power supply, the PC28F128J3F75A delivers lightning-fast random access read times typically around 75 nanoseconds, ensuring zero-wait-state performance for high-speed microcontrollers and digital signal processors. The memory array is meticulously organized into uniformly sized 128-Kbyte blocks, facilitating highly efficient sector-level erase and rewrite cycles without disturbing adjacent data sectors. It incorporates advanced hardware write protection mechanisms, including a flexible block-locking architecture and a dedicated VPEN pin, to prevent accidental data corruption during unpredictable power transitions or system glitches.

Alternative NOR Flash memory Models

● S29GL128P11TFI010 (Infineon/Cypress): A highly reliable 128Mb 3V NOR flash offering pin-to-pin compatibility and a similar uniform block architecture for seamless industrial drop-in replacements.

● MX29LV128DBTI-70G (Macronix): A cost-effective, high-performance 128Mb parallel flash memory device featuring fast 70ns access times tailored for embedded computing applications.

● S29AL128J55TFI010 (Spansion): A legacy-compatible 128Mb NOR flash specifically designed with advanced mirror-bit technology for enhanced data security in automotive and networking systems.

● W39N128MJBAP (Winbond): A versatile 128Mb multi-purpose flash memory engineered for highly reliable XIP operations across a wide variety of consumer and industrial microcontroller platforms.

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