Analog Devices Inc./Maxim Integrated DS1250Y-100
| Parameters | |
|---|---|
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | DS1250Y100 |
| Standard Package | 11 |
| Mfr | Analog Devices Inc./Maxim Integrated |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 100ns |
| Access Time | 100 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 32-DIP Module (0.600", 15.24mm) |
| Supplier Device Package | 32-EDIP |
| Base Product Number | DS1250Y |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 100 ns 32-EDIP
