MR0D08BMA45R

MR0D08BMA45R


  • Manufacturer: Everspin Technologies Inc.
  • CONEVO NO: MR0D08BMA45R
  • Package: 48-LFBGA
  • Datasheet: PDF
  • Stock: In stock
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Parameters
Series -
Moisture Sensitivity Level (MSL) 3 (168 Hours)
RoHS Status ROHS3 Compliant
Package / Case 48-LFBGA
Mfr Everspin Technologies Inc.
Mounting Type Surface Mount
Operating Temperature 0°C ~ 70°C (TA)
Technology MRAM (Magnetoresistive RAM)
Supplier Device Package 48-FBGA (8x8)
Access Time 45 ns
Memory Size 1Mbit
Memory Type Non-Volatile
Voltage - Supply 3V ~ 3.6V
Memory Organization 128K x 8
Memory Format RAM
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Package Tape & Reel (TR)
Product Status Active
Base Product Number MR0D08
REACH Status REACH Unaffected
Standard Package 2,000
ECCN EAR99
HTSUS 8542.32.0071

MR0D08BMA45R 1Mbit Parallel MRAM IC 1Mbit Parallel 45 ns

The MR0D08BMA45R is a high-performance 1Mbit (128K x 8) magnetoresistive random-access memory (MRAM) IC manufactured by Everspin Technologies, designed as a reliable, non-volatile parallel memory solution. Operating with a dual-supply architecture (VDD: 2.7V–3.6V, VDDQ: 1.65V–3.6V), it offers SRAM-compatible 45ns fast read/write cycles with unlimited endurance, eliminating write delays and data corruption risks. Featuring automatic low-voltage data protection during power loss, it ensures 20+ years of non-volatile data retention without batteries. Housed in a compact, RoHS-compliant 48-pin FBGA (8x8mm) package, it operates over 0°C to +70°C, ideal for embedded systems requiring instant, persistent data storage and replacing Flash, SRAM, EEPROM, and battery-backed SRAM (BBSRAM).

MR0D08BMA45R Key Features

● 2.7V–3.6V core voltage (VDD) and 1.65V–3.6V flexible I/O voltage (VDDQ) 

● 45ns read/write access time, asynchronous SRAM-compatible timing

● Zero write-cycle limitations, supporting constant, high-frequency data updates.

● 20+ year data retention

Application Scenarios

1. Industrial Embedded Systems: Stores critical configuration, calibration, and event log data for PLCs and factory automation.

2. Networking & Communications: Retains firmware settings, routing tables, and port configurations in routers and switches.

3. Medical Devices: Preserves patient data, sensor logs, and device settings in portable diagnostic and monitoring equipment.

4. Automotive Electronics: Saves non-volatile control parameters for infotainment, body control modules, and sensor systems.

5. Consumer Electronics: Replaces BBSRAM in smart meters, POS terminals, and IoT gateways for battery-free persistence.

6. Data Acquisition Systems: Captures and retains real-time sensor data without power interruption risks.

Alternative MRAM IC Models

● Cypress CY14V101LA-BA45: 1Mbit nvSRAM with 45ns speed, pin-compatible parallel interface, and battery-backed non-volatility for legacy embedded designs.

● Everspin MR0A08BMA35R: 1Mbit parallel MRAM with faster 35ns access, identical 48-FBGA package, and higher performance for latency-sensitive applications.

● Ramon Tech RM1024D08BMA45: 1Mbit MRAM with 45ns parallel timing, 48-FBGA footprint, and industrial temperature support as a cost-effective alternative.

● STMicroelectronics M95128-DRMN3TP/K: 1Mbit SPI EEPROM with non-volatile storage, offering low-power serial alternative for space-constrained I/O-limited designs.

● Adesto AT25SF128A: 128Mb SPI Flash memory with high-density storage, suitable for bulk firmware/code storage where fast write endurance is non-critical.

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