CY62177EV18LL-70BAXI
| Parameters | |
|---|---|
| Series | MoBL® |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 48-TFBGA |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | SRAM - Asynchronous |
| Supplier Device Package | 48-FBGA (8x9.5) |
| Access Time | 70 ns |
| Memory Size | 32Mbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.65V ~ 2.25V |
| Memory Organization | 4M x 8, 2M x 16 |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Package | Tray |
| Product Status | Active |
| Base Product Number | CY62177 |
| REACH Status | REACH Unaffected |
| Standard Package | 210 |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
CY62177EV18LL-70BAXI CMOS SRAM IC 32Mbit Parallel 70 ns 48-FBGA
The CY62177EV18LL-70BAXI is a high-performance, low-power 1-Megabit (128K x 8) CMOS Static Random-Access Memory (SRAM) from Infineon Technologies. Operating from a 1.8V core voltage with separate 1.8V/3.0V I/O supply options, it is specifically engineered for battery-powered and portable applications where power efficiency is paramount. This asynchronous SRAM features a fully static memory core, requiring no clocks or refresh cycles, and offers very fast access times. Its low operating and standby currents make it ideal for use as working memory in mobile devices, IoT endpoints, and other energy-sensitive systems that require reliable, high-speed data storage.
CY62177EV18LL-70BAXI CMOS SRAM Advantages
The CY62177EV18LL-70BAXI delivers an outstanding balance of speed and ultra-low power consumption, which is critical for extending battery life in portable devices. The separate VDD and VDDQ supplies allow the core to run at the lowest possible voltage while the I/Os interface with higher-voltage system components, optimizing both power and compatibility. Its very low standby current enables the memory to retain data for extended periods on a small battery or supercapacitor. The fast access time ensures minimal processor wait states, maintaining system performance.
Alternative SRAM Solutions
● AS6C1008-55SIN: A 1Mb (128Kx8) low-power SRAM with a 55 ns speed grade, operating at 3.3V and available in a SOIC package.
● IS62WV1288DBLL-45TLI: A 1Mb, 3.3V SRAM with 45 ns access time, offered in a TSOP I package.
● 23A1024-I/P: A 1Mb SPI SRAM with a serial interface, offering lower pin count and simplified connectivity for space-constrained designs.
