Infineon Technologies CY7C1415BV18-200BZXC
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| Parameters | |
|---|---|
| Base Product Number | CY7C1415 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 105 |
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II |
| Memory Size | 36Mbit |
| Memory Organization | 1M x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (15x17) |
SRAM - Synchronous, QDR II Memory IC 36Mbit Parallel 200 MHz 165-FBGA (15x17)
