FM24C04B-GTR
| Parameters | |
|---|---|
| Series | F-RAM™ |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FRAM (Ferroelectric RAM) |
| Supplier Device Package | 8-SOIC |
| Access Time | 550 ns |
| Memory Size | 4Kbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 4.5V ~ 5.5V |
| Clock Frequency | 1 MHz |
| Memory Organization | 512 x 8 |
| Memory Format | FRAM |
| Memory Interface | I²C |
| Write Cycle Time - Word, Page | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Base Product Number | FM24C04 |
| REACH Status | REACH Unaffected |
| Standard Package | 2,500 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
FM24C04B‑GTR FRAM (Ferroelectric RAM) Memory IC 4Kbit I²C 1 MHz 550 ns 8-SOIC
FM24C04B‑GTR is a 4‑Kbit (512×8) serial ferroelectric random‑access memory (F‑RAM) manufactured by Infineon, adopting high‑reliability ferroelectric storage technology with standard I2C two‑wire communication interface, 4.5 V‑5.5 V operating voltage and maximum 1 MHz bus clock speedInfineon T.... Packaged in 8‑pin SOIC surface‑mount housing and supplied in tape‑and‑reel form, this non‑volatile memory chip delivers ultra‑high 100‑trillion read‑write cycle endurance, instant NoDelay™ write operation without waiting delay, 151‑year long‑term data retention and industrial‑grade temperature performance from ‑40 °C to 85 °C, serving as a high‑performance pin‑compatible upgrade alternative for common I2C EEPROM devices in systems requiring frequent, fast and reliable data logging.
Key Features & Applications
- 4‑Kbit memory capacity organized as 512 bytes × 8‑bit data width, fully compatible with standard I2C serial communication protocol.
- Extraordinary write endurance up to 1×10¹⁴ read‑write cycles, far exceeding the endurance limit of conventional EEPROM chips.
- NoDelay™ instant write capability completes data storage at bus speed, removing mandatory post‑write delay and acknowledge‑polling operations.
- Impressive 151‑year non‑volatile data retention at 65 °C, ensuring long‑term stored‑data safety after power‑off.
- Supports multi‑rate I2C clock including 100 kHz, 400 kHz and up to 1 MHz high‑speed transmission.
FM24C04B‑GTR is widely deployed for high‑frequency data logging modules, industrial automation controllers, smart‑metering and energy‑measurement equipment, automotive accessory data recorders, portable medical instruments, wireless sensor nodes, consumer smart home control panels, POS terminal parameter storage circuits and embedded system configuration memory, wherever frequent, fast non‑volatile data updates and long‑term data preservation are critical design requirements.
FAQ
Q: What is the biggest advantage of F‑RAM over traditional EEPROM?
A: It provides nearly unlimited write cycles and zero write delay, ideal for applications performing frequent data‑recording operations.
Q: Is extra write waiting time required after sending data bytes over I2C bus?
A: No, data is stored immediately, and the master device can send the next command without delay.
Alternative non‑volatile memory models
1. FM24CL04B‑GTR: Pin‑to‑pin compatible 4‑Kbit F‑RAM with 2.7 V‑3.65 V low‑voltage power supply, designed for 3.3‑volt battery‑powered embedded systems.
2. AT24C04: Popular 4‑Kbit I2C EEPROM memory chip, a low‑cost substitute for projects with low‑frequency write requirements and no high‑endurance demands.
3. FM24C16B‑GTR: 16‑Kbit ferroelectric memory with identical package and I2C interface, offering expanded storage capacity when larger data space is needed.
