Infineon Technologies FM25V20A-GTR
| Parameters | |
|---|---|
| Series | F-RAM™ |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-SOIC (0.209", 5.30mm Width) |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FRAM (Ferroelectric RAM) |
| Supplier Device Package | 8-SOIC |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 2V ~ 3.6V |
| Clock Frequency | 40 MHz |
| Memory Organization | 256K x 8 |
| Memory Format | FRAM |
| Memory Interface | SPI |
| Write Cycle Time - Word, Page | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Base Product Number | FM25V20 |
| REACH Status | REACH Unaffected |
| Standard Package | 2,000 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
FM25V20A-GTR SPI F-RAM Memory, 2-Mbit Non-Volatile Memory
The FM25V20A-GTR from Infineon Technologies (formerly Cypress Semiconductor) is a high-performance 2-Mbit serial F-RAM (Ferroelectric Random Access Memory) device organized as 256K × 8 bits, featuring a standard SPI interface and housed in an 8-pin SOIC package. This non-volatile memory combines the fast read/write performance and high endurance of RAM with the data retention of traditional non-volatile memories, operating across a wide voltage range of 2.7V to 3.6V. Designed for applications requiring frequent and rapid data writes with minimal power consumption, it offers exceptional reliability and virtually unlimited endurance, making it ideal for mission-critical data logging, industrial automation, and automotive systems where EEPROM or Flash limitations would be constraining.
Key Features
This F-RAM device delivers remarkable performance with unlimited read/write endurance (10^14 cycles) and instantaneous non-volatile writes, eliminating the need for complex write protocols or delay periods. It features a high-speed SPI interface operating at up to 40MHz, enabling rapid data access with zero write latency and byte-level addressability. The FM25V20A-GTR consumes ultra-low active and standby power while offering a fast read/write cycle time of 100ns, significantly outperforming traditional EEPROM or Flash memories. It includes advanced security features with a unique factory-programmed serial number and hardware write protection, while operating across an industrial temperature range (-40°C to +85°C) with 100-year data retention at 85°C. The FM25V20A-GTR is extensively used in automotive systems for storing critical data such as event records, mileage information, and sensor calibration data that require frequent updates.
Alternative Ferroelectric RAM Models
● CY15B104QSN-108SXI (Infineon Technologies): A 4-Mbit SPI F-RAM with 108MHz operation and industrial temperature range, offering higher density and speed.
● MB85RS2MTYPN-G-ACE1 (Fujitsu): A 2-Mbit SPI F-RAM featuring high reliability and compatibility with industrial and automotive applications.
● MR25H40CDF (Everspin Technologies): A 4-Mbit SPI MRAM device offering high endurance and fast write performance with magnetic tunnel junction technology.
● AT25040B-SSHL-T (Microchip Technology): A 4-Kbit SPI EEPROM with hardware protection, suitable for applications with lower endurance requirements.
