S25FL256SAGNFI000
| Parameters | |
|---|---|
| Series | FL-S |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-WDFN Exposed Pad |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FLASH - NOR |
| Supplier Device Package | 8-WSON (6x8) |
| Memory Size | 256Mbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 2.7V ~ 3.6V |
| Clock Frequency | 133 MHz |
| Memory Organization | 32M x 8 |
| Memory Format | FLASH |
| Memory Interface | SPI - Quad I/O |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Active |
| Base Product Number | S25FL256 |
| REACH Status | REACH Unaffected |
| Standard Package | 338 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
S25FL256SAGNFI000 Serial NOR Flash memory chip 256Mbit SPI-Quad I/O 133 MHz
The S25FL256SAGNFI000 is a high-performance 256 Mbit (32 MB) Serial NOR Flash memory device from Infineon Technologies, designed for reliable data storage and retrieval in a wide range of embedded applications. This memory ic utilizes advanced MirrorBit™ technology and Eclipse™ architecture, featuring a Serial Peripheral Interface (SPI) with Multi-I/O support that includes Single I/O (SIO), Dual I/O (DIO), and Quad I/O (QIO) modes, as well as Double Data Rate (DDR) read commands for enhanced data transfer efficiency. Packaged in a compact 8-pin WSON (6x8 mm) format with an exposed pad for improved thermal management, the device operates from a supply voltage range of 2.7V to 3.6V and supports an industrial temperature range of -40°C to +85°C, making it suitable for demanding environments across multiple industries.
S25FL256SAGNFI000 NOR Flash memory Key Features
The S25FL256SAGNFI000 delivers exceptional performance with a maximum clock frequency of 133 MHz, achieving read speeds up to 52 MB/s in Quad I/O DDR mode, which enables Execute-In-Place (XIP) capabilities comparable to traditional parallel NOR flash memories while significantly reducing signal count. The chip features a Page Programming Buffer that allows up to 256 words (512 bytes) to be programmed in a single operation, resulting in faster effective programming and erase operations compared to previous generation SPI algorithms. Key specifications include an endurance rating of 100,000 program-erase cycles typical, data retention of 20 years minimum, and low power consumption with active current of 10 mA. The device supports extended addressing with 24-bit or 32-bit address options, includes Common Flash Interface (CFI) data for configuration information, and offers AutoBoot functionality for automatic execution of read commands upon power-up or reset.
Alternative SPI NOR Flash Solutions
● S25FL256SAGMFI000: A 16-pin SOIC package variant offering identical 256 Mbit SPI NOR Flash functionality with the same 133 MHz operation and industrial temperature range, providing an alternative package option for different PCB layout requirements.
● S25FL128SAGNFI000: A lower density 128 Mbit (16 MB) variant in the same 8-pin WSON package, offering similar SPI Multi-I/O interface and performance features for applications requiring reduced memory capacity.
● N25Q256A13EF8A0G: A Micron Technology alternative offering 256 Mbit SPI NOR Flash with Quad I/O support and 133 MHz operation, providing pin-compatible functionality with similar performance characteristics.
