IS42S16320F-7BL
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 54-TFBGA |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Technology | SDRAM |
| Supplier Device Package | 54-TW-BGA (8x13) |
| Access Time | 5.4 ns |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Voltage - Supply | 3V ~ 3.6V |
| Clock Frequency | 143 MHz |
| Memory Organization | 32M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Active |
| Base Product Number | IS42S16320 |
| REACH Status | REACH Unaffected |
| Standard Package | 240 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0028 |
IS42S16320F-7BL 512Mbit SDRAM Parallel 143 MHz 5.4 ns 54-TW-BGA (8x13)
The IS42S16320F-7BL is a high-performance 512Mbit (32M x 16) synchronous dynamic random-access memory (SDRAM) manufactured by Integrated Silicon Solution Inc. (ISSI), designed for applications demanding reliable, high-bandwidth memory at 3.3V operation. This device features a fully synchronous interface where all control and data signals are referenced to the positive edge of the clock, enabling seamless integration with FPGA, ASIC, and microprocessor-based systems. Organized as 8M x 16 x 4 banks, the chip supports programmable CAS latency of 2 or 3 clock cycles and burst lengths of 1, 2, 4, 8, or full page, providing designers with flexible timing optimization for diverse applications including wireless access points, base stations, routers, network storage systems, industrial controllers, automotive infotainment, and energy management equipment.
The IS42S16320F-7BL delivers a maximum clock frequency of 143MHz with a guaranteed access time of 5.4ns (CL=3) from clock to valid data output, providing a peak bandwidth of approximately 228 MB/s in 16-bit configuration. The device operates from a single 3.0V to 3.6V supply (nominal 3.3V ± 0.3V) with LVTTL-compatible inputs that simplify interfacing with 3.3V logic families without level shifting. Active power consumption is typically 110mA maximum during operation, while standby current drops to just 4mA in self-refresh mode, making it suitable for always-on and battery-backed systems. The chip supports both auto-refresh (CBR) and self-refresh modes with 8,192 refresh cycles every 64ms, ensuring data integrity without host intervention. Additional features include burst read/write and burst read/single write operations, burst termination via burst stop and precharge commands, and four-bank page burst access that maximizes throughput in pipelined architectures.
Alternative DRAM Models
● IS42S16320F-6BLI (ISSI) - Same 512Mbit 32Mx16 SDRAM in TFBGA-54 but rated at 166MHz with 6ns access time, offering a faster speed grade for bandwidth-critical designs.
● MT48LC16M16A2-75 (Micron) - A 256Mbit 16Mx16 SDRAM from Micron with comparable 7.5ns timing in TSOP-54, serving as a cross-vendor alternative for legacy designs.
● AS4C16M16SA-7TCN (Alliance Memory) - A Chinese-manufactured 512Mbit SDRAM with 143MHz operation and 54-ball BGA packaging, delivering a cost-effective drop-in replacement for volume production.
● HY57V561620FTP-7 (Hynix) - A 256Mbit 16Mx16 SDRAM in TSOP-54 with 143MHz support, suitable for designs where memory density can be reduced to achieve similar performance.
