| Parameters |
| Mfr |
ISSI, Integrated Silicon Solution Inc |
| Series |
Automotive, AEC-Q100 |
| Package |
Bulk |
| Product Status |
Active |
| Memory Type |
Volatile |
| Memory Format |
DRAM |
| Technology |
SDRAM - DDR4 |
| Memory Size |
8Gbit |
| Memory Organization |
512M x 16 |
| Memory Interface |
Parallel |
| Clock Frequency |
1.333 GHz |
| Write Cycle Time - Word, Page |
15ns |
| Access Time |
18 ns |
| Voltage - Supply |
1.14V ~ 1.26V |
| Operating Temperature |
-40°C ~ 105°C (TC) |
| Mounting Type |
Surface Mount |
| Package / Case |
96-TFBGA |
| Supplier Device Package |
96-TWBGA (10x14) |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Other Names |
706-IS46QR16512A-075VBLA2 |
| Standard Package |
136 |
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.333 GHz 18 ns 96-TWBGA (10x14)