IS46QR81024A-083TBLA2-TR
| Parameters | |
|---|---|
| Series | Automotive, AEC-Q100 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 78-TFBGA |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Technology | SDRAM - DDR4 |
| Supplier Device Package | 78-TWBGA (10x14) |
| Access Time | 18 ns |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.14V ~ 1.26V |
| Clock Frequency | 1.2 GHz |
| Memory Organization | 1G x 8 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Other Names | 706-IS46QR81024A-083TBLA2-TR |
| Standard Package | 2,000 |
IS46QR81024A-083TBLA2-TR DDR4 SDRAM Memory IC 8Gbit Parallel 1.2 GHz 18 ns
The IS46QR81024A-083TBLA2-TR from ISSI is an automotive-grade 8Gb DDR4 SDRAM organized as 1G x 8. This high-speed volatile memory operates at a 1.2V core voltage (VDD/VDDQ) with a separate 2.5V VPP supply for the word-line booster, ensuring robust performance in demanding environments. The chip incorporates key DDR4 features such as Bank Groups architecture for improved bandwidth efficiency, Data Bus Inversion (DBI), programmable On-Die Termination (ODT), and Command/Address Parity error checking, making it a reliable memory solution for automotive and industrial systems requiring high data integrity.
IS46QR81024A-083TBLA2-TR Memory Applications
● Automotive Infotainment: High-resolution head-units and digital instrument clusters requiring fast frame buffer access.
● Advanced Driver Assistance Systems (ADAS): Radar processing, front-camera modules, and sensor fusion systems needing high-bandwidth memory.
● Telematics & Gateways: Vehicle connectivity modules and central gateways handling large data packets.
● Industrial Computing: Ruggedized embedded computers and HMIs operating in extended temperature ranges.
Alternative Memory Models
1. MT40A1G8SA-062EAAT:E (Micron): An 8Gb DDR4 x8 chip with similar 1.2V/2400Mbps specs and automotive temperature range, offering a multi-sourced alternative.
2. K4A8G165WC-BCWE (Samsung): A 8Gb DDR4 SDRAM organized as 512M x16, providing a different bit-width option for specific bus configurations.
3. IS43QR81024A-083TBLA2: The commercial/industrial grade version of the same chip from ISSI, suitable for non-automotive applications with a 0°C to +95°C range.
