ISSI, Integrated Silicon Solution Inc IS64LF25636B-7.5B3LA3
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| Parameters | |
|---|---|
| Write Cycle Time - Word, Page | - |
| Access Time | 7.5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-TFBGA (13x15) |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Other Names | 706-IS64LF25636B-7.5B3LA3 |
| Standard Package | 144 |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | Automotive, AEC-Q100 |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Standard |
| Memory Size | 9Mbit |
| Memory Organization | 256K x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 117 MHz |
SRAM - Standard Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
