Kioxia America, Inc. TC58BYG2S0HBAI4
| Parameters | |
|---|---|
| Mfr | Kioxia America, Inc. |
| Series | Benand™ |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-TFBGA (9x11) |
| Base Product Number | TC58BYG2 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0051 |
| Other Names | TC58BYG2S0HBAI4JDH |
| Standard Package | 210 |
FLASH - NAND (SLC) Memory IC 4Gbit Parallel 25 ns 63-TFBGA (9x11)
