THGBMJG7C2LBAU8
| Parameters | |
|---|---|
| Series | e•MMC™ |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 153-WFBGA |
| Mfr | Kioxia America, Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Technology | FLASH - NAND |
| Supplier Device Package | 153-WFBGA (11.5x13) |
| Memory Size | 128Gbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | - |
| Memory Organization | 16G x 8 |
| Memory Format | FLASH |
| Memory Interface | eMMC |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Active |
| Base Product Number | THGBMJG7 |
| REACH Status | REACH Unaffected |
| Standard Package | 152 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
THGBMJG7C2LBAU8 embedded MultiMediaCard storage solution 128Gbit 153-WFBGA
The THGBMJG7C2LBAU8 is a 16GB industrial-grade embedded MultiMediaCard (eMMC) storage solution manufactured by Kioxia Corporation (formerly Toshiba Memory), designed to deliver robust non-volatile memory performance for demanding embedded applications. This device integrates advanced 15nm 2D MLC NAND flash memory with a dedicated controller chip within a compact Multi-Chip Module (MCM) architecture, fully compliant with the JEDEC/MMCA Version 5.1 interface standard supporting 1-I/O, 4-I/O, and 8-I/O modes for flexible data transfer configurations.
The THGBMJG7C2LBAU8 features a 128Gbit (16GB) storage capacity organized as 16G x 8-bit architecture, housed in a space-efficient 153-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 11.5mm x 13mm x 1.2mm maximum height, making it ideal for space-constrained designs. The device operates across an extended industrial temperature range of -40 degrees C to +105 degrees C (with case temperature up to +115 degrees C max), ensuring reliable performance in harsh environments including automotive, industrial automation, and outdoor applications.
Power management is optimized for embedded systems with dual voltage rails: VCC core voltage ranging from 2.7V to 3.6V and VCCQ I/O voltage supporting both 1.7V-1.95V and 2.7V-3.6V configurations, enabling compatibility with various host processor interfaces. The device delivers sequential read speeds up to 400 MB/s in x8 mode, with low power consumption featuring typical sleep mode currents of 105 micro A (VCCQ only) and 145 micro A (combined), making it suitable for battery-powered and energy-efficient designs.
Alternative embedded flash memory solutions
● Samsung KLMAG1JETD-B041: A 16GB eMMC 5.1 HS400 module from Samsung offering comparable industrial-grade performance with wide temperature tolerance and high-speed sequential read capabilities for embedded storage applications.
● Micron MTFC16GAPALBH-AAT: A 16GB eMMC flash memory solution from Micron featuring robust industrial temperature specifications and advanced power management for reliable operation in demanding embedded environments.
● SanDisk SDINBDG4-16G-XI2: A 16GB iNAND IX EM122 extended temperature eMMC module from Western Digital/SanDisk designed for industrial and automotive applications requiring high endurance and wide thermal operating ranges.
● SK Hynix H26M62002JPR: A 32GB eMMC 5.1 EG510 series module from SK Hynix offering enhanced storage capacity with similar high-speed interface support and industrial reliability features for embedded system designs.
