MX30LF1G18AC-TI
| Parameters | |
|---|---|
| Series | MX30LF |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Mfr | Macronix |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FLASH - NAND |
| Supplier Device Package | 48-TSOP |
| Access Time | 20 ns |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 2.7V ~ 3.6V |
| Memory Organization | 128M x 8 |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 20ns |
| Package | Tray |
| Product Status | Not For New Designs |
| Base Product Number | MX30LF1 |
| REACH Status | REACH Unaffected |
| Standard Package | 96 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
MX30LF1G18AC-TI SLC NAND Flash memory IC 1Gbit Parallel 20 ns 48-TSOP
The MX30LF1G18AC-TI is a 1Gb (128M x 8) SLC NAND Flash memory fabricated by Macronix, packaged in a 48- TSOP and operated from a single 2.7V to 3.6V supply. Built on reliable SLC NAND architecture, it organizes its capacity into pages of (2048 + 64) bytes and blocks of (128K + 4K) bytes, and complies with the ONFI 1.0 standard for broad ecosystem compatibility. With a parallel x8 multiplexed command, address, and data interface, the device delivers a 25us first-byte read latency and 20ns sequential read cycle, making it well suited for code and data storage in embedded platforms. Rated for an industrial temperature range of -40°C to +85°C, it achieves typical endurance of 100K program/erase cycles with 4-bit ECC per (512 + 16) bytes and offers 10-year data retention, positioning it as a dependable choice for long-life industrial and infrastructure equipment.
This memory IC integrates a rich set of features that strengthen performance, power efficiency, and data integrity. It supports cache read and cache program operations to accelerate throughput, with a typical page program time of 300us and a typical block erase time of 1ms. Active current is capped at 30mA during read, program, and erase, while sleep-mode standby current is limited to 50uA, enabling low-power embedded designs. Hardware data protection is provided by a WP# pin and a PT (protection) pin that enables whole-chip protection on power-up, together with temporary and solid protection schemes configured via the set-feature command. Additional capabilities include an on-chip 2112-byte buffer, unique ID read per ONFI, secure OTP support of 30 pages, and a ready/busy (R/B#) status indicator.
Alternative SLC NAND memory models
1. MX30LF1GE8AB-TI (Macronix): A 1Gb, 3V SLC NAND with an ECC-free 2KB page architecture in 48-TSOP, targeting legacy systems that implement error correction externally or do not require built-in ECC management.
2. W29N01HVSINF (Winbond): A 1Gb 3V SLC NAND Flash from another leading supplier that provides a cross-vendor alternative for designers seeking second-sourcing flexibility, though firmware and timing adaptation may be required.
3. MX30LF4G28AC-TI (Macronix): A higher-density 4Gb 3V SLC NAND featuring 4KB pages and 8-bit ECC in 48-TSOP, suitable for next-generation embedded applications demanding larger non-volatile storage with enhanced error correction.
