Micron Technology Inc. MT40A1G8SA-062E AAT:E TR

MT40A1G8SA-062E AAT:E TR DDR4 SDRAM

The MT40A1G8SA-062E AAT:E TR is a high-performance 8Gb DDR4 SDRAM component manufactured by Micron Technology, designed for automotive and industrial applications requiring reliable memory solutions. This volatile memory device features a parallel interface with a 1G x 8 organization, delivering high-speed data transfer rates at a clock frequency of up to 1.6GHz (1600MHz). Packaged in a compact 78-ball TFBGA (7.5mm x 11mm) form factor, this DRAM module operates within a tight voltage range of 1.14V to 1.26V and supports industrial temperature ranges from -40°C to +105°C (TC), making it suitable for harsh operating environments. The device complies with AEC-Q100 automotive qualifications and JEDEC JESD79-4 standards, ensuring robust performance in critical applications. With an access time of 19ns and write cycle time of 15ns, this memory solution offers excellent performance for demanding computing tasks.

Key Features

This DDR4 SDRAM features several advanced technologies including 8n-bit prefetch architecture, programmable data strobe preamble, and command/address latency (CAL) for optimized performance. The device incorporates innovative power-saving features such as temperature-controlled refresh (TCR), fine granularity refresh, and low-power auto self-refresh (LPASR) modes. It supports data bus inversion (DBI) for reduced power consumption during data transmission and includes comprehensive error detection capabilities with command/address parity and write CRC (cyclic redundancy check). The memory module offers multiple internal banks (16 banks for x4/x8 configurations, 8 banks for x16) for efficient memory management and supports various refresh modes including auto refresh, self-refresh, and self-refresh abort. With output driver calibration and dynamic on-die termination (ODT), the device maintains signal integrity in high-speed applications.

Applications

This automotive-grade DDR4 SDRAM is ideal for advanced driver assistance systems (ADAS), in-vehicle infotainment systems, industrial automation equipment, and ruggedized computing platforms. Its wide temperature range and AEC-Q100 qualification make it particularly suitable for automotive telematics, engine control units, and vehicle networking applications. The high-speed performance supports real-time data processing in medical imaging systems, aerospace avionics, and military communication devices. Industrial applications include programmable logic controllers, human-machine interfaces, and edge computing nodes where reliable memory performance is critical. The device's power-efficient design also makes it appropriate for battery-powered industrial handhelds and portable diagnostic equipment.

Alternative Models

For designers considering alternatives to the MT40A1G8SA-062E AAT:E TR, several compatible options exist:

● IS46TR16128BL-125KBLA2-TR (ISSI): 16Gb DDR3L with 1.35V operation, 1600MHz clock, and industrial temp range (-40°C to +95°C).

● CY14V101QS-SE108XQT (Cypress): Non-volatile F-RAM alternative with 1Mbit density, unlimited write endurance, and 108ns access time.

● MT40A1G8SA-062E:E TR: Commercial-grade version with 0°C to +95°C operating range and identical electrical specifications.