Micron Technology Inc. MT40A1G8SA-062E:R
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 78-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Technology | SDRAM - DDR4 |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Access Time | 19 ns |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.14V ~ 1.26V |
| Clock Frequency | 1.6 GHz |
| Memory Organization | 1G x 8 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Package | Bulk |
| Product Status | Active |
| Base Product Number | MT40A1G8 |
| REACH Status | REACH Unaffected |
| Other Names | 557-MT40A1G8SA-062E:R |
| Standard Package | 1,260 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
Micron Server Memory Chip MT40A1G8SA-062E:R DDR4 SDRAM 8Gbit Parallel 1.6 GHz 19 ns
The MT40A1G8SA-062E:R is a high-performance DDR4 SDRAM (Synchronous Dynamic Random-Access Memory) module designed for enterprise and data center applications requiring high bandwidth and low latency. This chip operates at an optimized speed grade of DDR4-3200 (PC4-25600) with a CL22 (CAS Latency 22) timing, ensuring efficient data transfer for demanding workloads such as server virtualization, high-performance computing (HPC), and AI acceleration. With a 16Gb (2GB) density per die and a 1.2V operating voltage, the MT40A1G8SA-062E:R delivers power-efficient performance while maintaining high signal integrity for mission-critical systems.
Featuring x8 organization and a 2G x 8-bit configuration, the MT40A1G8SA-062E:R supports ECC (Error-Correcting Code) functionality, enhancing data reliability in enterprise environments where data integrity is paramount. The chip complies with JEDEC DDR4 standards, ensuring compatibility with industry-standard server and workstation motherboards. Its advanced on-die termination (ODT) and signal integrity optimization minimize signal reflection and crosstalk, enabling stable operation at high frequencies. Additionally, the MT40A1G8SA-062E:R supports temperature-controlled refresh (TCR) and dynamic ODT (ODT), improving thermal management and signal stability in varying operating conditions.
The MT40A1G8SA-062E:R is manufactured using Micron’s advanced 1α nm process technology, delivering superior power efficiency and endurance compared to previous-generation DDR4 solutions. With a data rate of up to 3200 MT/s (Mega Transfers per Second), this memory module is optimized for RDIMM (Registered DIMM) and LRDIMM (Load-Reduced DIMM) configurations, making it ideal for high-density server deployments. Its low operating voltage (1.2V) reduces power consumption, while its high-speed signaling ensures minimal latency, critical for real-time data processing applications. The chip is packaged in a standard FBGA (Fine-Pitch Ball Grid Array) form factor, ensuring compatibility with existing server and workstation designs.
For applications requiring alternative DDR4 memory solutions, consider the following comparable chips:
● MT40A512M16HA-083E: A 4Gb DDR4 SDRAM with DDR4-3200 speed, offering a balance between density and performance for mid-range servers.
● MT40A1G16HA-075E: An 8Gb DDR4 SDRAM with DDR4-2933 speed, providing cost-effective high-density memory for enterprise applications.
● MT40A2G8SA-062E: A 16Gb DDR4 SDRAM with DDR4-3200 speed, offering higher capacity for high-performance computing and AI workloads.
