MT40A2G16TBB-062E:F
| Parameters | |
|---|---|
| Other Names | 557-MT40A2G16TBB-062E:F |
| Standard Package | 1,020 |
| Series | TwinDie™ |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 96-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Technology | SDRAM - DDR4 |
| Supplier Device Package | 96-FBGA (7.5x13) |
| Access Time | 13.75 ns |
| Memory Size | 32Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.14V ~ 1.26V |
| Clock Frequency | 1.6 GHz |
| Memory Organization | 2G x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Active |
| Base Product Number | MT40A2G16 |
| REACH Status | REACH Unaffected |
MT40A2G16TBB-062E:F 16 Gb DDR4 SDRAM component
The MT40A2G16TBB-062E:F is a high-density, high-performance 16 Gb (2G x 8) DDR4 SDRAM component from Micron Technology. Operating at a data rate of 3200 MT/s (DDR4-3200) with a low operating voltage of 1.2V, it is engineered to deliver exceptional bandwidth and power efficiency for demanding server, networking, and computing applications. This memory chip utilizes Micron's advanced 1z nm process technology, offering improved performance, reliability, and lower power consumption compared to previous generations. It supports standard DDR4 features including on-die termination (ODT), data bus inversion (DBI), and programmable CAS latency, making it a key component for building high-capacity, high-speed memory subsystems.
This DDR4 SDRAM provides a maximum bandwidth of 25.6 GB/s per device and is organized as a single, 8-bank component. It features a 16-bit prefetch architecture with a burst length of 8. Key timing parameters at 3200 MT/s include tCL=22, tRCD=22, and tRP=22. The device includes auto refresh and self-refresh modes for power management, along with ZQ calibration for improved signal integrity.
Alternative DDR4 SDRAM memory Models
● Samsung K4AAG165WB-BCTD: A 16Gb DDR4 SDRAM with similar 3200 MT/s speed and advanced performance features for server and enterprise applications.
● SK Hynix H5ANAG8NCJR-VKC: A 16Gb DDR4 component offering high density and reliability, optimized for data center and high-performance computing modules.
● Nanya NT5AD512M16C4: A high-density DDR4 SDRAM providing robust performance for a range of computing and embedded memory applications.
