Micron Technology Inc. MT40A2G8SA-062E:F

Micron MT40A2G8SA-062E:F: DDR4 SDRAM, 2666 MT/s DDR4 Memory Solutions, 16Gbit Parallel 1.5 GHz 19 ns 

1.  Overview

The Micron Technology MT40A2G8SA-062E:F is a 16 Gb (2 GB) DDR4 SDRAM memory chip designed for high-bandwidth, low-power computing systems.  Operating at a data rate of 2666 MT/s (PC4-21300), this device supports dual-rank configurations and a 1.2 V power supply, making it ideal for energy-efficient servers, workstations, and networking equipment.  It features a 64-bit data width, 16 banks, and a 4K refresh interval, ensuring reliable performance under heavy workloads.  Packaged in a 78-ball FBGA (Fine-Pitch Ball Grid Array), it offers a compact footprint for dense memory configurations while adhering to JEDEC DDR4 standards for compatibility with mainstream processors and chipsets.

2.  Key Features

●High-Speed Data Transfer: 2666 MT/s data rate with CL19 timings, enabling fast memory access for real-time data processing.

●Energy Efficiency: 1.2 V operation reduces power consumption by up to 40% compared to DDR3, with On-Die Termination (ODT) and Self-Refresh modes to optimize power usage.

●Dual-Rank Architecture: Supports 2R x 8 organization (2 ranks × 8 banks) for flexible memory scaling in multi-channel systems.

●Robust Error Correction: On-Die Error Correction Code (ECC) enhances data integrity in mission-critical applications.

●Industrial-Grade Reliability: Operates across a -25°C to +95°C temperature range, with 240-ball FBGA packaging for robust thermal and mechanical performance.

●Scalable Design: Compatible with DDR4-2666 UDIMM/RDIMM modules, enabling seamless integration in enterprise storage and cloud computing environments.

3.  Applications

●Data Centers & Cloud Computing: High-density memory for servers handling big data analytics, AI training, and virtualization.

●Networking Equipment: Memory buffers in routers, switches, and 5G base stations for low-latency packet processing.

●Enterprise Storage: SSD controllers and RAID arrays requiring fast, reliable memory for data caching and redundancy.

●Embedded Systems: Industrial automation, medical imaging, and automotive infotainment systems needing high-bandwidth memory.

●High-Performance Computing (HPC): Scientific simulations, financial modeling, and AI workloads benefiting from low-latency DDR4 performance.

4.  Advantages of Selection

●Cost-Effective Scalability: Dual-rank design reduces PCB layer counts and system costs compared to single-rank alternatives.

●Energy Savings: Lower voltage (1.2 V) and ODT power-down modes cut energy consumption by up to 40% vs. DDR3.

●Enhanced Reliability: On-die ECC and thermal sensors mitigate data corruption risks in 24/7 operation.

●Wide Temperature Tolerance: Industrial-grade thermal range ensures stability in data centers and edge computing nodes.

●Ecosystem Compatibility: JEDEC-standard DDR4 interface simplifies integration with Intel Xeon, AMD EPYC, and ARM-based platforms.

5.  Alternative SDRAM Models

●MT40A512M16LY-075E:F: A 4 Gb (512 MB) DDR4 SDRAM with 2400 MT/s speed, targeting cost-sensitive embedded systems.

●MT40A1G16RC-062E:B: 8 Gb (1 GB) DDR4 with 2666 MT/s speed, optimized for high-density workstations and edge servers.

●Samsung K4A8G165WC-BCTD: A 8 Gb DDR4 chip with 3200 MT/s speed, offering higher bandwidth for gaming and AI accelerators.

●SK Hynix HMA82GU7AFR8N-XN: 16 Gb DDR4 with 2933 MT/s, targeting high-frequency trading and real-time analytics.