MT41J256M16HA-093G:E
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 96-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Technology | SDRAM - DDR3 |
| Supplier Device Package | 96-FBGA (9x14) |
| Access Time | 20 ns |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.425V ~ 1.575V |
| Clock Frequency | 1.066 GHz |
| Memory Organization | 256M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Package | Tray |
| Product Status | Obsolete |
| Base Product Number | MT41J256M16 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,000 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
MT41J256M16HA-093G:E DDR3 SDRAM Memory IC 4Gbit Parallel 1.066 GHz 20 ns
The MT41J256M16HA-093G:E is a high-density 4Gb (256M×16) DDR3 SDRAM from Micron Technology, housed in a compact 96-pin FBGA (9×14mm) package for high-speed, low-power embedded and industrial memory applications. Designed for parallel data access, it operates at a 1066MHz clock frequency (2133MT/s data rate) with a 1.5V nominal supply (1.425V–1.575V), delivering reliable, high-bandwidth storage for data-intensive systems. Supporting both auto-refresh and self-refresh modes, it features a 20ns access time and industrial-grade temperature tolerance (0°C to +95°C), making it suitable for 24/7 operation in rugged environments. As a legacy DDR3 solution, it balances performance, power efficiency, and cost for mature embedded designs.
Alternative SDRAM Components
● K4B4G1646E-BYK0: A 4Gb DDR3 SDRAM with 1.5V operation and 96-FBGA package, offering drop-in compatibility and 1333MHz speed for higher-bandwidth embedded systems.
● H5TQ4G63AFR-G7L: A 4Gb DDR3 SDRAM from SK Hynix with 1.5V supply, 1066MHz clock, and industrial temperature range, providing equivalent performance as a Micron alternative.
● MT41K256M16TW-107:P: A 4Gb DDR3L SDRAM with 1.35V low-voltage operation, reducing power consumption for battery-powered IoT and portable industrial devices.
● W632GU6MB-12: A 4Gb DDR3 SDRAM with 96-FBGA package and 1.5V core voltage, offering cost-effective compatibility for high-volume consumer electronics applications.
