Micron Technology Inc. MT41K256M16TW-107 IT:P
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 96-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Technology | SDRAM - DDR3L |
| Supplier Device Package | 96-FBGA (8x14) |
| Access Time | 20 ns |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.283V ~ 1.45V |
| Clock Frequency | 933 MHz |
| Memory Organization | 256M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Package | Box |
| Product Status | Active |
| Base Product Number | MT41K256M16 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,224 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0036 |
MT41K256M16TW-107 IT:P 4Gb DDR3L SDRAM
The MT41K256M16TW-107 IT:P from Micron Technology is a high-performance 4Gb DDR3L SDRAM device designed for memory-intensive applications requiring high bandwidth and low power consumption. This advanced memory chip features a 256M x 16 configuration with a maximum operating frequency of 933 MHz (DDR3L-1866), delivering a peak data rate of 14.9 GB/s while operating at a low voltage of 1.35V.
This SDRAM utilizes a double data rate architecture with an 8n prefetch buffer and programmable CAS latency from 6 to 13 cycles, making it ideal for networking equipment, enterprise servers, and high-performance computing systems where memory bandwidth and power efficiency are critical. The MT41K256M16TW-107 supports on-die termination (ODT) and write leveling features, includes temperature-compensated self-refresh (TCSR) and partial array self-refresh (PASR) capabilities, and operates across the industrial temperature range of -40°C to +95°C, providing a robust memory solution for demanding applications.
Alternative DDR3 Memory Recommendations
● K4B4G1646E-BCMA (Samsung): A 4Gb DDR3L SDRAM with 1866 Mbps speed in 78-ball FBGA package offering similar performance in a different package configuration.
● EDY4032BABG-1A-E (Elpida): A 4Gb DDR3L device with 1600 Mbps data rate and 1.35V operation in 78-ball BGA package for power-sensitive applications.
● H5TC4G83CFR-PBA (SK Hynix): A 4Gb DDR3L SDRAM with 1866 Mbps speed and 1.35V operation in 96-ball BGA package with industrial temperature support.
● IS43TR16256A-1.5GBLI (ISSI): A 4Gb DDR3L memory with 1333 Mbps data rate and industrial temperature range in standard BGA package.
