MT48LC16M16A2P-6A:G
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Technology | SDRAM |
| Supplier Device Package | 54-TSOP II |
| Access Time | 5.4 ns |
| Memory Size | 256Mbit |
| Memory Type | Volatile |
| Voltage - Supply | 3V ~ 3.6V |
| Clock Frequency | 167 MHz |
| Memory Organization | 16M x 16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Package | Tray |
| Product Status | Active |
| Base Product Number | MT48LC16M16A2 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,080 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0024 |
MT48LC16M16A2P-6A:G Product Overview
The Micron MT48LC16M16A2P-6A:G is a high-speed 256Mb SDRAM (Synchronous Dynamic Random Access Memory) designed for 3.3V systems, featuring a fully synchronous interface with all signals registered on the positive edge of the clock signal (CLK). This CMOS-based chip integrates 268,435,456 bits organized as 16M words x 16 bits, utilizing four internal banks for optimized performance. Key features include programmable burst lengths (1, 2, 4, 8, or full-page), automatic precharge and refresh modes, LVTTL-compatible I/O, and support for PC100/PC133 standards. Operating at a maximum clock frequency of 167MHz with 5.4ns access time, it supports a supply voltage range of 3V–3.6V and operates across -40°C to +85°C temperatures, making it ideal for industrial, automotive, and high-performance computing applications. The TSOP-54 package ensures compact integration in space-constrained designs.
MT48LC16M16A2P-6A:G Applications & Benefits
Optimized for mixed-voltage systems, the MT48LC16M16A2P-6A:G excels in PC100/PC133-compliant systems, industrial controllers, automotive electronics, and portable devices. Its low-power CMOS design ensures energy efficiency, while synchronous operation and burst modes minimize latency. The chip's compatibility with LVTTL standards and robust ESD protection makes it suitable for noisy environments. Backward compatibility with legacy DRAM systems and support for partial power-down (IOFF circuitry) further extend its usability in mission-critical applications.
Alternative SDRAM Models
● ISSI IS42S16160J-7TLI: A 256Mb SDRAM with 167MHz max clock, 5.4ns access time, and TSOP-54 package, ideal for cost-sensitive industrial designs.
● Samsung K4S641632H-UC60: A 1Gb SDRAM featuring 133MHz operation, 7.5ns access time, and 1.8V/3.3V dual-voltage support for mobile applications.
● Nanya NT5CB128M16FP-DI: A 2Gb DDR2 SDRAM with 400MHz operation, 10ns access time, and FBGA packaging for high-density server/workstation use.
