MT48LC4M32B2TG-7:G
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| RoHS Status | RoHS non-compliant |
| Package / Case | 86-TFSOP (0.400", 10.16mm Width) |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Technology | SDRAM |
| Supplier Device Package | 86-TSOP II |
| Access Time | 5.5 ns |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Voltage - Supply | 3V ~ 3.6V |
| Clock Frequency | 143 MHz |
| Memory Organization | 4M x 32 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 14ns |
| Package | Tray |
| Product Status | Obsolete |
| Base Product Number | MT48LC4M32B2 |
| REACH Status | REACH Unaffected |
| Standard Package | 1,000 |
| ECCN | EAR99 |
| HTSUS | 8542.32.0002 |
MT48LC4M32B2TG-7:G SDRAM Memory IC 128Mbit Parallel 143 MHz 5.5 ns
The MT48LC4M32B2TG-7:G is a high-performance synchronous dynamic random-access memory (SDRAM) from Micron Technology, featuring 128Mbit (4M×32) storage capacity with four internal banks, designed for high-speed data storage in embedded and consumer applications. It operates at a 3.0V-3.6V supply voltage, supports 143MHz maximum clock frequency, and integrates parallel interface for fast data transfer, with 5.5ns access time and 14ns write cycle time. Equipped with auto/self refresh modes, programmable burst lengths (1, 2, 4, 8 or full page), and LVTTL-compatible I/O, it ensures efficient data handling and seamless integration with MCUs and FPGAs, packaged in an 86-lead TSOP II (TFSOP) surface-mount package for space-efficient designs.
Operating at 3.0V-3.6V supply voltage, the MT48LC4M32B2TG-7:G has a 143MHz maximum clock frequency, supporting CAS latency settings of 1, 2, and 3 for flexible performance adaptation. It operates reliably across 0°C-70°C commercial temperature range, features 64ms/4096-cycle refresh rate, and has low power consumption for energy-efficient operation. Though RoHS non-compliant with tin-lead terminals, it boasts robust signal integrity, ESD protection, and moisture sensitivity level 2 (1-year floor life), suitable for cost-sensitive, high-speed storage applications despite its obsolete status.
Alternative SDRAM Models
● Micron MT48LC4M32B2TG-6:G: 128Mbit SDRAM, 166MHz, 86-TSOP II, higher speed direct substitute.
● Winbond W9825G6KH-6: 128Mbit SDRAM, 166MHz, 86-TSOP II, cost-effective alternative with similar specs.
● Samsung K4S561632H-UC75: 128Mbit SDRAM, 143MHz, 86-TSOP II, reliable replacement with RoHS compliance.
