Micron Technology Inc. MT49H8M36SJ-5:B
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| Parameters | |
|---|---|
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0028 |
| Standard Package | 1,000 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM |
| Memory Size | 288Mbit |
| Memory Organization | 8M x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TFBGA |
| Supplier Device Package | 144-FBGA (18.5x11) |
| Base Product Number | MT49H8M36 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
DRAM Memory IC 288Mbit Parallel 200 MHz 20 ns 144-FBGA (18.5x11)
