Micron Technology Inc. MT53E2G32D4NQ-046 WT:C
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| Parameters | |
|---|---|
| Memory Interface | - |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-VFBGA |
| Supplier Device Package | 200-VFBGA (10x14.5) |
| Base Product Number | MT53E2G32 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| Other Names | 557-MT53E2G32D4NQ-046WT:C |
| Standard Package | 1,360 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 64Gbit |
| Memory Organization | 2G x 32 |
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz 200-VFBGA (10x14.5)
