MT53E512M32D1ZW-046 WT:B TR
| Parameters | |
|---|---|
| Standard Package | 2,000 |
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 200-TFBGA |
| Mfr | Micron Technology Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Technology | SDRAM - Mobile LPDDR4 |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Access Time | 3.5 ns |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Voltage - Supply | 1.06V ~ 1.17V |
| Clock Frequency | 2.133 GHz |
| Memory Organization | 512M x 32 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 18ns |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Base Product Number | MT53E512 |
| REACH Status | REACH Unaffected |
| Other Names | 557-MT53E512M32D1ZW-046WT:BTR |
MT53E512M32D1ZW-046 LPDDR4/LPDDR4X SDRAM IC 16Gbit Parallel 2.133 GHz 3.5 ns
The MT53E512M32D1ZW-046 is a 16 Gbit (2 GB) Mobile LPDDR4/LPDDR4X SDRAM from Micron Technology, organized as 512M x 32-bit. Operating at a 1.1 V core voltage (with VDDQ options for 1.1 V or 0.6 V), it delivers a high data rate of 4266 MT/s (2133 MHz clock) with a 200-ball TFBGA package measuring just 10 mm x 14.5 mm. This chip supports 32-bit wide channel operation and features a programmable CAS latency, offering a balance of high bandwidth and low power consumption for advanced mobile and embedded applications. It is available in commercial (0°C to 95°C) and industrial (-40°C to 95°C) temperature grades, making it a versatile memory solution for performance-driven designs.
Key Features
● High-Density & Speed: 16 Gbit (2 GB) capacity with 4266 MT/s data rate for fast data processing and multitasking.
● Low Power LPDDR4X: Utilizes 1.1 V VDD2 and 0.6 V VDDQ (I/O) for reduced active and standby power in battery-sensitive devices.
● Wide Temperature Support: Offered in both commercial (0°C to +95°C) and extended industrial/automotive (-40°C to +95°C) grades.
● Advanced Memory Features: Supports Write Leveling, CA Training, and other signal integrity features for robust high-speed operation.
Alternative SDRAM Models
● Samsung K4F6E3S4HM-MGCJ: A direct 16 Gbit LPDDR4 x32 competitor with similar 4266 Mbps speed and 200-ball FBGA package.
● SK Hynix H9HCNNNBKMMLHR-NME: 16 Gbit LPDDR4X offering comparable density and performance, commonly used in mobile platforms.
● Micron MT53E512M32D2 (Dual-Die): A 32 Gbit (4 GB) dual-die version for designs requiring higher capacity in the same footprint.
● ISSI (Integrated Silicon Solution) LPDDR4 16Gb: A multi-sourced alternative for supply chain diversification in industrial markets.
