| Parameters |
| Mfr |
MoSys, Inc. |
| Series |
- |
| Package |
Tray |
| Product Status |
Active |
| Memory Type |
Volatile |
| Memory Format |
SRAM |
| Technology |
1T-SRAM |
| Memory Size |
576Mbit |
| Memory Organization |
8M x 72 |
| Memory Interface |
Parallel |
| Clock Frequency |
1.25 GHz |
| Write Cycle Time - Word, Page |
- |
| Access Time |
2.6 ns |
| Voltage - Supply |
0.95V |
| Operating Temperature |
0°C ~ 85°C (TC) |
| Mounting Type |
Surface Mount |
| Package / Case |
324-BGA |
| Supplier Device Package |
324-PBGA (19x19) |
| Base Product Number |
MSR820 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
4 (72 Hours) |
| ECCN |
3A991B2B |
| HTSUS |
8542.32.0036 |
| Other Names |
2331-MSR820AJC288-12 |
| Standard Package |
84 |
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)