Nearson Inc. IS25WE512M-RMLE-TY
| Parameters | |
|---|---|
| Mfr | Nearson Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 112 MHz |
| Write Cycle Time - Word, Page | 50µs, 1ms |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| Other Names | 706-IS25WE512M-RMLE-TY |
| Standard Package | 176 |
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O, QPI, DTR 112 MHz 16-SOIC
